Publications by authors named "AL Shluger"

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Electron Ptychography for Atom-by-Atom Quantification of 1D Defect Complexes in Monolayer MoS.
Leyi Loh, Shoucong Ning, Daria Kieczka, Yuan Chen, Jianmin Yang, Alexander L Shluger

ACS Nano· February 2025

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Reactions of Hydrogen-Passivated Silicon Vacancies in -Quartz with Electron Holes and Hydrogen.
Teofilo Cobos Freire, Jack Strand, Alexander L Shluger

Nanomaterials (Basel)· January 2025

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Modeling the Effects of Varying the Ti Concentration on the Mechanical Properties of Cu-Ti Alloys.
Vasileios Fotopoulos, Corey S O'Hern, Mark D Shattuck, Alexander L Shluger

ACS Omega· March 2024

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On the Structure of Oxygen Deficient Amorphous Oxide Films.
Jack Strand, Alexander L Shluger

Adv Sci (Weinh)· February 2024

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Structure and Migration Mechanisms of Small Vacancy Clusters in Cu: A Combined EAM and DFT Study.
Vasileios Fotopoulos, David Mora-Fonz, Manuel Kleinbichler, Rishi Bodlos, Ernst Kozeschnik, Alexander L Shluger

Nanomaterials (Basel)· April 2023

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Thermodynamic analysis of the interaction between metal vacancies and hydrogen in bulk Cu.
Vasileios Fotopoulos, Ricardo Grau-Crespo, Alexander L Shluger

Phys Chem Chem Phys· March 2023

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Difference in Structure and Electronic Properties of Oxygen Vacancies in -Quartz and -Cristobalite Phases of SiO.
Katherine L Milton, Thomas R Durrant, Teofilo Cobos Freire, Alexander L Shluger

Materials (Basel)· February 2023

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Carboxylate Adsorption on Rutile TiO(100): Role of Coulomb Repulsion, Relaxation, and Steric Hindrance.
Immad M Nadeem, Laura Hargreaves, George T Harrison, Hicham Idriss, Alexander L Shluger

J Phys Chem C Nanomater Interfaces· July 2021

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Properties of intrinsic point defects and dimers in hexagonal boron nitride.
Jack Strand, Luca Larcher, Alexander L Shluger

J Phys Condens Matter· January 2020

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Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO Interface.
Jonathon Cottom, Anton Bochkarev, Emilia Olsson, Kamal Patel, Manveer Munde, Alexander L Shluger

ACS Appl Mater Interfaces· October 2019

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The origin of negative charging in amorphous AlO films: the role of native defects.
Oliver A Dicks, Jonathon Cottom, Alexander L Shluger, Valeri V Afanas'ev

Nanotechnology· May 2019

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First principles calculations of optical properties for oxygen vacancies in binary metal oxides.
Jack Strand, Sergey K Chulkov, Matthew B Watkins, Alexander L Shluger

J Chem Phys· January 2019

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Structure and properties of intrinsic and extrinsic defects in black phosphorus.
Julian Gaberle, Alexander L Shluger

Nanoscale· November 2018

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Silicon Oxide (SiO ): A Promising Material for Resistance Switching?
Adnan Mehonic, Alexander L Shluger, David Gao, Ilia Valov, Enrique Miranda

Adv Mater· October 2018

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Relation between image charge and potential alignment corrections for charged defects in periodic boundary conditions.
T R Durrant, S T Murphy, M B Watkins, A L Shluger

J Chem Phys· July 2018

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Intrinsic charge trapping in amorphous oxide films: status and challenges.
Jack Strand, Moloud Kaviani, David Gao, Al-Moatasem El-Sayed, Valeri V Afanas'ev, Alexander L Shluger

J Phys Condens Matter· June 2018

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Reorganization takes energy.
Alexander L Shluger, Peter Grutter

Nat Nanotechnol· May 2018

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Intrinsic electron trapping in amorphous oxide.
Jack Strand, Moloud Kaviani, Valeri V Afanas'ev, Judit G Lisoni, Alexander L Shluger

Nanotechnology· March 2018

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Theoretical modeling of charge trapping in crystalline and amorphous AlO.
Oliver A Dicks, Alexander L Shluger

J Phys Condens Matter· August 2017

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Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.
M S Munde, A Mehonic, W H Ng, M Buckwell, L Montesi, A L Shluger

Sci Rep· August 2017

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Influence of ions on two-dimensional and three-dimensional atomic force microscopy at fluorite-water interfaces.
K Miyazawa, M Watkins, A L Shluger, T Fukuma

Nanotechnology· June 2017

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Diffusion and aggregation of oxygen vacancies in amorphous silica.
Manveer S Munde, David Z Gao, Alexander L Shluger

J Phys Condens Matter· June 2017

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Calculating free energies of organic molecules on insulating substrates.
Julian Gaberle, David Z Gao, Alexander L Shluger

Beilstein J Nanotechnol· March 2017

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A mechanism for Frenkel defect creation in amorphous SiO facilitated by electron injection.
David Z Gao, Al-Moatasem El-Sayed, Alexander L Shluger

Nanotechnology· December 2016

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Role of hydrogen in volatile behaviour of defects in SiO-based electronic devices.
Yannick Wimmer, Al-Moatasem El-Sayed, Wolfgang Gös, Tibor Grasser, Alexander L Shluger

Proc Math Phys Eng Sci· June 2016

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