Publications by authors named "CJ Humphreys"

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Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers.
Zhichao Weng, Robert Wallis, Bryan Wingfield, Paul Evans, Piotr Baginski, Colin J Humphreys

ACS Appl Electron Mater· October 2024

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[Not Available].
Christopher J Humphreys, Ran R Liu, Taryn M Simms

CMAJ· April 2024

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Narcolepsy.
Christopher J Humphreys, Ran R Liu, Taryn M Simms

CMAJ· January 2024

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Alternative and Complementary Treatments for Obstructive Sleep Apnea.
Christopher R Kawala, Christopher J Humphreys, Tanya Khaper, Clodagh M Ryan

Am J Respir Crit Care Med· November 2021

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Reply: BAL lymphocyte percentage is as good as the company it keeps.
Nicola Adderley, Christopher J Humphreys, Hayley Barnes, Zahra A Premji, Kerri A Johannson

Eur Respir J· February 2021

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Echocardiography-Derived Stroke Volume Index Is Associated With Adverse In-Hospital Outcomes in Intermediate-Risk Acute Pulmonary Embolism: A Retrospective Cohort Study.
Graeme Prosperi-Porta, Kevin Solverson, Nowell Fine, Christopher J Humphreys, André Ferland

Chest· September 2020

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Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films.
Jinshuai Zhang, Qin Guo, Xuan Li, Chao Li, Kan Wu, Colin J Humphreys

ACS Nano· September 2020

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Nanomechanics of graphene oxide-bacteriophage based self-assembled porous composites.
Yiwei Sun, Paolo Passaretti, Ignacio Hernandez, Jesus Gonzalez, Wei Liu, Colin J Humphreys

Sci Rep· September 2020

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Bronchoalveolar lavage fluid lymphocytosis in chronic hypersensitivity pneumonitis: a systematic review and meta-analysis.
Nicola Adderley, Christopher J Humphreys, Hayley Barnes, Brett Ley, Zahra A Premji

Eur Respir J· August 2020

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InGaN as a Substrate for AC Photoelectrochemical Imaging.
Bo Zhou, Anirban Das, Menno J Kappers, Rachel A Oliver, Colin J Humphreys

Sensors (Basel)· October 2019

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3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite?
Y W Sun, W Liu, I Hernandez, J Gonzalez, F Rodriguez, C J Humphreys

Phys Rev Lett· September 2019

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Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures.
W E Blenkhorn, S Schulz, D S P Tanner, R A Oliver, M J Kappers, C J Humphreys

J Phys Condens Matter· May 2018

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Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.
Fabien C-P Massabuau, Sneha L Rhode, Matthew K Horton, Thomas J O'Hanlon, András Kovács, Colin J Humphreys

Nano Lett· August 2017

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The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.
C J Humphreys, J T Griffiths, F Tang, F Oehler, S D Findlay

Ultramicroscopy· May 2017

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A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on -plane and -plane GaN substrates.
Dmytro Kundys, Danny Sutherland, Matthew J Davies, Fabrice Oehler, James Griffiths, Colin J Humphreys

Sci Technol Adv Mater· November 2016

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High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.
M M Muhammed, M A Roldan, Y Yamashita, S-L Sahonta, I A Ajia, C J Humphreys

Sci Rep· July 2016

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Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning.
Bertrand Rouet-Leduc, Kipton Barros, Turab Lookman, Colin J Humphreys

Sci Rep· April 2016

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Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping.
James T Griffiths, Siyuan Zhang, Bertrand Rouet-Leduc, Wai Yuen Fu, An Bao, Colin J Humphreys

Nano Lett· November 2015

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Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
Markus Pristovsek, Yisong Han, Tongtong Zhu, Martin Frentrup, Menno J Kappers, Colin J Humphreys

Phys Status Solidi B Basic Solid State Phys· May 2015

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Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing.
A J Trindade, B Guilhabert, E Y Xie, R Ferreira, J J D McKendry, C J Humphreys

Opt Express· April 2015

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Segregation of In to dislocations in InGaN.
Matthew K Horton, Sneha Rhode, Suman-Lata Sahonta, Menno J Kappers, Sarah J Haigh, Colin J Humphreys

Nano Lett· February 2015

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Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.
J G Lozano, H Yang, M P Guerrero-Lebrero, A J D'Alfonso, A Yasuhara, C J Humphreys

Phys Rev Lett· September 2014

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Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN.
Gunasekar Naresh-Kumar, Jochen Bruckbauer, Paul R Edwards, Simon Kraeusel, Ben Hourahine, Colin J Humphreys

Microsc Microanal· February 2014

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Interfacial structure and chemistry of GaN on Ge(111).
Siyuan Zhang, Yucheng Zhang, Ying Cui, Christoph Freysoldt, Jörg Neugebauer, Colin J Humphreys

Phys Rev Lett· December 2013

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Prospects of III-nitride optoelectronics grown on Si.
D Zhu, D J Wallis, C J Humphreys

Rep Prog Phys· October 2013

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