Publications by authors named "JS Speck"

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I
Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer.
Michael Wang, Wenting Gong, Feng Wu, Tanay Tak, Steven P DenBaars, James S Speck

Opt Express· May 2025

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10.4% external quantum efficiency 294 nm UV LEDs at 20 A/cm with a fully transparent tunnel junction.
Michael Wang, Wenting Gong, Feng Wu, Steven P DenBaars, Shuji Nakamura, James S Speck

Opt Express· May 2025

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III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition.
Matthew S Wong, Emily S Trageser, Haojun Zhang, Hsun-Ming Chang, Stephen Gee, James S Speck

Opt Express· June 2024

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Health Service Utilization in Adolescents Following a First Arrest: The Role of Antisocial Behavior, Callous-Unemotional Traits, and Juvenile Justice System Processing.
Julianne S Speck, Paul J Frick, Erin P Vaughan, Toni M Walker, Emily L Robertson

Adm Policy Ment Health· May 2024

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High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates.
Jacob J Ewing, Cheyenne Lynsky, Matthew S Wong, Feng Wu, Yi Chao Chow, James S Speck

Opt Express· December 2023

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High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization.
Yifan Yao, Hongjian Li, Michael Wang, Panpan Li, Michael Lam, James S Speck

Opt Express· August 2023

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Proactive and reactive aggression: Developmental trajectories and longitudinal associations with callous-unemotional traits, impulsivity, and internalizing emotions.
Erin P Vaughan, Julianne S Speck, Paul J Frick, Toni M Walker, Emily L Robertson

Dev Psychopathol· April 2023

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Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes.
Panpan Li, Hongjian Li, Yifan Yao, Kai Shek Qwah, Mike Iza, James S Speck

Opt Express· February 2023

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Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds.
Mylène Sauty, Nicolas M S Lopes, Jean-Philippe Banon, Yves Lassailly, Lucio Martinelli, James S Speck

Phys Rev Lett· November 2022

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Longitudinal associations of parental monitoring and delinquent peer affiliation: The potential influence of parental solicitation and monitoring rules.
Erin P Vaughan, Julianne S Speck, Paul J Frick, Emily L Robertson, James V Ray

J Adolesc· June 2022

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Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control.
Panpan Li, Hongjian Li, Yifan Yao, Haojun Zhang, Cheyenne Lynsky, James S Speck

Opt Express· July 2021

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Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors.
Yi Chao Chow, Changmin Lee, Matthew S Wong, Yuh-Renn Wu, Shuji Nakamura, James S Speck

Opt Express· August 2020

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Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition.
Panpan Li, Haojun Zhang, Hongjian Li, Mike Iza, Yifan Yao, James S Speck

Opt Express· June 2020

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Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics.
G Lheureux, M Monavarian, R Anderson, R A Decrescent, J Bellessa, J S Speck

Opt Express· June 2020

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560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates.
Michel Khoury, Hongjian Li, Bastien Bonef, Tom Mates, Feng Wu, James S Speck

Opt Express· June 2020

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Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate.
Hongjian Li, Panpan Li, Haojun Zhang, Yi Chao Chow, Matthew S Wong, James S Speck

Opt Express· April 2020

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Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments.
Matthew S Wong, Jared A Kearns, Changmin Lee, Jordan M Smith, Cheyenne Lynsky, James S Speck

Opt Express· February 2020

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Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates.
Michel Khoury, Hongjian Li, Haojun Zhang, Bastien Bonef, Matthew S Wong, James S Speck

ACS Appl Mater Interfaces· December 2019

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Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate.
Takeshi Kamikawa, Srinivas Gandrothula, Masahiro Araki, Hongjian Li, Valeria Bonito Oliva, James S Speck

Opt Express· August 2019

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Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC.
Burhan K Saifaddin, Michael Iza, Humberto Foronda, Abdullah Almogbel, Christian J Zollner, James S Speck

Opt Express· August 2019

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All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity.
J Seres, E Seres, C Serrat, E C Young, J S Speck

Opt Express· March 2019

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Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes.
Kareem W Hamdy, Erin C Young, Abdullah I Alhassan, Daniel L Becerra, Steven P DenBaars, James S Speck

Opt Express· March 2019

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Prospects for 100% wall-plug efficient III-nitride LEDs.
Leah Y Kuritzky, Claude Weisbuch, James S Speck

Opt Express· June 2018

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Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes.
Anisa Myzaferi, Asad J Mughal, Daniel A Cohen, Robert M Farrell, Shuji Nakamura, James S Speck

Opt Express· May 2018

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Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications.
Chao Shen, Tien Khee Ng, Changmin Lee, Shuji Nakamura, James S Speck

Opt Express· March 2018

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