Publications by authors named "BE Sernelius"

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C
Casimir effects in systems containing 2D layers such as graphene and 2D electron gases.
B E Sernelius

J Phys Condens Matter· June 2015

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Intermolecular Casimir-Polder forces in water and near surfaces.
Priyadarshini Thiyam, Clas Persson, Bo E Sernelius, Drew F Parsons, Anders Malthe-Sørenssen

Phys Rev E Stat Nonlin Soft Matter Phys· September 2014

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Attractive double-layer forces between neutral hydrophobic and neutral hydrophilic surfaces.
Eduardo R A Lima, Mathias Boström, Nadine Schwierz, Bo E Sernelius, Frederico W Tavares

Phys Rev E Stat Nonlin Soft Matter Phys· December 2011

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Electric dipole polarizabilities and C6 dipole-dipole dispersion coefficients for sodium clusters and C60.
Auayporn Jiemchooroj, Patrick Norman, Bo E Sernelius

J Chem Phys· September 2006

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Complex polarization propagator method for calculation of dispersion coefficients of extended pi-conjugated systems: the C6 coefficients of polyacenes and C60.
Auayporn Jiemchooroj, Patrick Norman, Bo E Sernelius

J Chem Phys· September 2005

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Comment on "Casimir force at both nonzero temperature and finite conductivity".
B E Sernelius, M Boström

Phys Rev Lett· December 2001

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Thermal effects on the casimir force in the 0.1- 5 &mgr;m range.
M Bostrom, BE Sernelius

Phys Rev Lett· May 2000

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Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime.
AC Ferreira, PO Holtz, BE Sernelius, I Buyanova, B Monemar

Phys Rev B Condens Matter· December 1996

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Electron mean free path in Be metal.
LI Johansson, BE Sernelius

Phys Rev B Condens Matter· December 1994

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F
Free-polaron absorption.
BE Sernelius

Phys Rev B Condens Matter· September 1993

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Intraband relaxation time in highly excited semiconductors.
BE Sernelius

Phys Rev B Condens Matter· March 1991

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Temperature-dependent resistivity of heavily doped silicon and germanium.
BE Sernelius

Phys Rev B Condens Matter· February 1990

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Generalized Drude approach to the conductivity relaxation time due to electron-hole collisions in optically excited semiconductors.
BE Sernelius

Phys Rev B Condens Matter· December 1989

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Free-carrier absorption from Fibonacci sequences of delta -doped layers in silicon.
BE Sernelius

Phys Rev B Condens Matter· September 1989

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Electron-electron interactions and the bandwidth of metals.
GD Mahan, BE Sernelius

Phys Rev Lett· June 1989

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Optical free-carrier absorption of an electron-hole plasma in silicon.
BE Sernelius

Phys Rev B Condens Matter· May 1989

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Band-gap tailoring of ZnO by means of heavy Al doping.
BE Sernelius, K Berggren, Z Jin, I Hamberg, CG Granqvist

Phys Rev B Condens Matter· June 1988

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Dimensional crossover for a quasi-one-dimensional polaron.
BE Sernelius

Phys Rev B Condens Matter· April 1988

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Polaron in n dimensions.
BE Sernelius

Phys Rev B Condens Matter· December 1987

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Self-energy corrections in photoemission of Na.
KW Shung, BE Sernelius, GD Mahan

Phys Rev B Condens Matter· September 1987

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Self-energy shifts in heavily doped, polar semiconductors.
BE Sernelius

Phys Rev B Condens Matter· September 1987

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Dynamical conductivity in the infrared from impurity scattering in a polar semiconductor.
BE Sernelius

Phys Rev B Condens Matter· July 1987

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Polarized hot-electron photoluminescence in highly doped GaAs.
BE Sernelius

Phys Rev B Condens Matter· December 1986

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Band-gap shifts in heavily p-type doped semiconductors of the zinc-blende and diamond type.
BE Sernelius

Phys Rev B Condens Matter· October 1986

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Band-gap shifts in heavily doped n-type GaAs.
BE Sernelius

Phys Rev B Condens Matter· June 1986

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