Publications by authors named "CE Stutz"

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T
Topology and glass structure evolution in (BaO)x((B₂O₃)₃₂(SiO₂)₆₈)(100-x) ternary--evidence of rigid, intermediate, and flexible phases.
C Holbrook, Shibalik Chakraborty, S Ravindren, P Boolchand, Jonathan T Goldstein, C E Stutz

J Chem Phys· April 2014

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Evidence for a stable excitonic ground state in a spatially separated electron-hole system.
J Cheng, J Kono, BD McCombe, I Lo, WC Mitchel, CE Stutz

Phys Rev Lett· January 1995

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Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well.
F Szmulowicz, MO Manasreh, CE Stutz, T Vaughan

Phys Rev B Condens Matter· October 1994

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Magnetoluminescence studies in GaAs-AlxGa1-xAs single heterojunctions: Observation of parity-forbidden Landau-level transitions.
DC Reynolds, DC Look, B Jogai, CE Stutz, R Jones

Phys Rev B Condens Matter· October 1994

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Cyclotron-resonance oscillations in a two-dimensional electron-hole system.
J Kono, BD McCombe, J Cheng, I Lo, WC Mitchel, CE Stutz

Phys Rev B Condens Matter· October 1994

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Radiative recombination at the AlxGa1-xAs-GaAs heterostructure interface by two-dimensional excitons.
DC Reynolds, DC Look, B Jogai, PW Yu, K Evans, CE Stutz

Phys Rev B Condens Matter· September 1994

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Photoenhancement and photoquenching of the 0.68-eV EL2 photoluminescence emission in GaAs grown by molecular-beam epitaxy at low temperatures.
PW Yu, MA Capano, AT D'Agostino, CE Stutz

Phys Rev B Condens Matter· June 1994

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Observation of free and bound excitons associated with the two-dimensional electron gas in modulation-doped heterostructures.
DC Reynolds, DC Look, B Jogai, CE Stutz

Phys Rev B Condens Matter· April 1994

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0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures.
PW Yu, GD Robinson, JR Sizelove, CE Stutz

Phys Rev B Condens Matter· February 1994

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Recombination of two-dimensional electrons with free light and heavy holes in AlxGa1-xAs-GaAs single heterojunctions in a magnetic field.
DC Reynolds, DC Look, B Jogai, CE Stutz

Phys Rev B Condens Matter· December 1993

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Phonon coupling associated with free-to-bound and bound-to-bound transitions in GaAs layers grown by molecular-beam epitaxy.
DC Reynolds, DN Talwar, MO Manasreh, CE Stutz

Phys Rev B Condens Matter· May 1993

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New AsGa related center in GaAs.
DC Look, ZQ Fang, JR Sizelove, CE Stutz

Phys Rev Lett· January 1993

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Increased screening of the hydrogenic donor due to modulation doping in quantum wells.
DC Reynolds, B Jogai, PW Yu, KR Evans, CE Stutz

Phys Rev B Condens Matter· December 1992

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Intersubband optical absorption in heavily doped n-type GaAs/Al0.3Ga0.7As multiple quantum wells.
B Jogai, MO Manasreh, CE Stutz, RL Whitney, DK Kinell

Phys Rev B Condens Matter· September 1992

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Fine-structure features due to wave-function localization in coupled GaAs-AlxGa1-xAs quantum wells.
DC Reynolds, KR Evans, B Jogai, CE Stutz, PW Yu

Phys Rev B Condens Matter· August 1992

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Indirect photoreflectance from high-electron-mobility transistor structures.
M Sydor, JR Engholm, MO Manasreh, KR Evans, CE Stutz

Phys Rev B Condens Matter· June 1992

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Light- and heavy-hole free-exciton transitions in narrow InxGa1-xAs/GaAs quantum wells.
DC Reynolds, KR Evans, CE Stutz, B Jogai, CR Wie

Phys Rev B Condens Matter· May 1992

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Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy.
von Bardeleben HJ, MO Manasreh, DC Look, KR Evans, CE Stutz

Phys Rev B Condens Matter· February 1992

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Photoluminescence determination of the binding energy of residual donors in 300-Å GaAs/AlxGa1-xAs quantum wells.
DC Reynolds, KR Evans, CE Stutz, KK Bajaj, PW Yu

Phys Rev B Condens Matter· October 1991

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Binding energy of excitons to neutral donors in In0.1Ga0.9As/GaAs quantum wells.
DC Reynolds, KR Evans, CE Stutz, PW Yu

Phys Rev B Condens Matter· July 1991

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Photoluminescence due to a bound-to-bound transition in a GaAs-Al0.3Ga0.7As quantum-well structure.
DC Reynolds, KR Evans, KG Merkel, CE Stutz, PW Yu

Phys Rev B Condens Matter· April 1991

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Anomalous behavior of cyclotron resonance in GaAs/Al0.28Ga0.72As high-electron-mobility transistor structures.
MO Manasreh, DW Fischer, KR Evans, CE Stutz

Phys Rev B Condens Matter· April 1991

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Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells.
MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz

Phys Rev B Condens Matter· April 1991

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Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells.
DC Reynolds, KR Evans, CE Stutz, PW Yu

Phys Rev B Condens Matter· February 1991

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Electric-field effects of the excitons in asymmetric triangular AlxGa1-xAs-GaAs quantum wells.
PW Yu, DC Reynolds, GD Sanders, KK Bajaj, CE Stutz

Phys Rev B Condens Matter· February 1991

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