Publications by authors named "DC Jacobson"

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F
Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors.
N K Dutta, D T Nichols, D C Jacobson, G Livescu

Appl Opt· February 1997

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Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity.
AM Vredenberg, NE Hunt, EF Schubert, DC Jacobson, JM Poate

Phys Rev Lett· July 1993

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Equilibrium shape of Si.
DJ Eaglesham, AE White, LC Feldman, N Moriya, DC Jacobson

Phys Rev Lett· March 1993

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Growth morphology and the equilibrium shape: The role of "surfactants" in Ge/Si island formation.
DJ Eaglesham, FC Unterwald, DC Jacobson

Phys Rev Lett· February 1993

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Determination of diffusion mechanisms in amorphous silicon.
S Coffa, JM Poate, DC Jacobson, W Frank, W Gustin

Phys Rev B Condens Matter· April 1992

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I
Interface-state-controlled segregation of gold during ion-beam-induced epitaxy of amorphous silicon.
JS Custer, MO Thompson, DC Jacobson, JM Poate

Phys Rev B Condens Matter· October 1991

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S
Structural relaxation and defect annihilation in pure amorphous silicon.
S Roorda, WC Sinke, JM Poate, DC Jacobson, S Dierker

Phys Rev B Condens Matter· August 1991

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Ion-beam-induced destruction of superconducting phase coherence in YBa2Cu3O7- delta.
AE White, KT Short, DC Jacobson, JM Poate, RC Dynes

Phys Rev B Condens Matter· March 1988

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N
Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si.
JM Poate, J Linnros, F Priolo, DC Jacobson, JL Batstone

Phys Rev Lett· March 1988

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Location of atoms in the first monolayer of GaAs on Si.
JR Patel, PE Freeland, MS Hybertsen, DC Jacobson, JA Golovchenko

Phys Rev Lett· November 1987

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R
Rutherford backscattering and marker diffusion to determine melt threshold in laser mirror damage studies.
C W Draper, L Buene, J M Poate, D C Jacobson

Appl Opt· May 1981

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