Publications by authors named "Daniel Feezell"

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Advanced Scanning Probe Nanolithography Using GaN Nanowires.
Mahmoud Behzadirad, Stephan Mecholdt, John N Randall, Joshua B Ballard, James Owen, Daniel F Feezell

Nano Lett· July 2021

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Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials.
Luis Miaja-Avila, Benjamin W Caplins, Ann N Chiaramonti, Paul T Blanchard, Matt D Brubaker, Daniel F Feezell

J Phys Chem C Nanomater Interfaces· January 2021

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Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements.
Arman Rashidi, Morteza Monavarian, Andrew Aragon, Daniel Feezell

Sci Rep· December 2019

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Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors.
Saadat M Mishkat-Ul-Masabih, Ting S Luk, Morteza Monavarian, Daniel F Feezell

Opt Express· April 2019

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Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar [Formula: see text] core-shell triangular nanostripe GaN/InGaN LEDs.
Serdal Okur, Ashwin K Rishinaramangalam, Saadat Mishkat-Ul-Masabih, Mohsen Nami, Sheng Liu, Daniel F Feezell

Nanotechnology· June 2018

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Insufficiency of the Young's modulus for illustrating the mechanical behavior of GaN nanowires.
Mohammad Reza Zamani Kouhpanji, Mahmoud Behzadirad, Daniel Feezell, Tito Busani

Nanotechnology· May 2018

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Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate.
Mahmoud Behzadirad, Mohsen Nami, Neal Wostbrock, Mohammad Reza Zamani Kouhpanji, Daniel F Feezell

ACS Nano· March 2018

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Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.
Mohsen Nami, Isaac E Stricklin, Kenneth M DaVico, Saadat Mishkat-Ul-Masabih, Ashwin K Rishinaramangalam, Daniel F Feezell

Sci Rep· January 2018

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Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients.
Morteza Monavarian, Arman Rashidi, Andrew Aragon, Sang H Oh, Mohsen Nami, Daniel Feezell

Opt Express· August 2017

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GaN nanowire tips for nanoscale atomic force microscopy.
Mahmoud Behzadirad, Mohsen Nami, Ashwin K Rishinaramagalam, Daniel F Feezell, Tito Busani

Nanotechnology· May 2017

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Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.
Changyi Li, Jeremy B Wright, Sheng Liu, Ping Lu, Jeffrey J Figiel, Daniel F Feezell

Nano Lett· February 2017

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Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.
Serdal Okur, Mohsen Nami, Ashwin K Rishinaramangalam, Sang H Oh, Steve P DenBaars, Daniel F Feezell

Opt Express· February 2017

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Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy.
Mohsen Nami, Rhett F Eller, Serdal Okur, Ashwin K Rishinaramangalam, Sheng Liu, Daniel F Feezell

Nanotechnology· January 2017

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Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires.
Mohsen Nami, Daniel F Feezell

Opt Express· December 2014

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Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G Van de Walle

Opt Express· January 2013

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