Publications by authors named "Doohyeok Lim"

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Logic and static memory functions of an inverter comprising a feedback field effect transistor.
Daon Kim, Doohyeok Lim

Nanotechnology· March 2025

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Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanism.
Yuna Suh, Doohyeok Lim

Nanotechnology· November 2024

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Doping-Less Feedback Field-Effect Transistors.
Hakin Kim, Doohyeok Lim

Micromachines (Basel)· February 2024

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Reconfigurable Feedback Field-Effect Transistors with a Single Gate.
Yoocheon Lee, Doohyeok Lim

Nanomaterials (Basel)· December 2023

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Temperature-Dependent Electrical Characteristics of Silicon Biristor.
Eunseong Kim, Doohyeok Lim

Micromachines (Basel)· November 2023

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Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping.
Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim

Nanotechnology· July 2022

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Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors.
Juhee Jeon, Young-Soo Park, Sola Woo, Doohyeok Lim, Jaemin Son

J Nanosci Nanotechnol· August 2021

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Steep Switching Characteristics of Partially Gated --- Silicon-Nanowire Transistors.
Jaemin Son, Doohyeok Lim, Sangsig Kim

J Nanosci Nanotechnol· August 2021

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Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistors.
Young-Soo Park, Doohyeok Lim, Jaemin Son, Juhee Jeon, Kyoungah Cho

Nanotechnology· March 2021

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Integrate-and-Fire Neuron Circuit Without External Bias Voltages.
Young-Soo Park, Sola Woo, Doohyeok Lim, Kyoungah Cho, Sangsig Kim

Front Neurosci· March 2021

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Feedback and tunneling operations of a p -i-n silicon nanowire field-effect transistor.
Yoonjoong Kim, Doohyeok Lim, Jinsun Cho, Sangsig Kim

Nanotechnology· October 2018

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Electrical characteristics of silicon nanowire CMOS inverters under illumination.
Jeuk Yoo, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim

Opt Express· February 2018

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Memory characteristics of silicon nanowire transistors generated by weak impact ionization.
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Sangsig Kim

Sci Rep· September 2017

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Steep switching characteristics of single-gated feedback field-effect transistors.
Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho

Nanotechnology· February 2017

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Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p(+)-i-n(+) Nanowires by Dual-Top-Gate Voltage Modulation.
Youngin Jeon, Minsuk Kim, Doohyeok Lim, Sangsig Kim

Nano Lett· August 2015

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