Publications by authors named "EP O'Reilly"

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Robust single frequency index-patterned laser design using a Fourier design method.
Niall D Boohan, Brian Corbett, Eoin P O'Reilly

Opt Express· March 2023

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Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green's function study.
Michael O'Donovan, Mathieu Luisier, Eoin P O'Reilly, Stefan Schulz

J Phys Condens Matter· October 2020

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GeSn alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.
Timothy D Eales, Igor P Marko, Stefan Schulz, Edmond O'Halloran, Seyed Ghetmiri, Eoin P O'Reilly

Sci Rep· October 2019

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GaAsBi/GaNAs type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.
Christopher A Broderick, Shirong Jin, Igor P Marko, Konstanze Hild, Peter Ludewig, Eoin P O'Reilly

Sci Rep· April 2017

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Optical gain in GaAsBi/GaAs quantum well diode lasers.
Igor P Marko, Christopher A Broderick, Shirong Jin, Peter Ludewig, Wolfgang Stolz, Eoin P O'Reilly

Sci Rep· July 2016

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Optical absorption of dilute nitride alloys using self-consistent Green's function method.
Masoud Seifikar, Eoin P O'Reilly, Stephen Fahy

Nanoscale Res Lett· September 2014

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Self-consistent Green's function method for dilute nitride conduction band structure.
Masoud Seifikar, Eoin P O'Reilly, Stephen Fahy

J Phys Condens Matter· September 2014

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Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects.
Alexander V Uskov, Igor E Protsenko, Renat S Ikhsanov, Viktoriia E Babicheva, Sergei V Zhukovsky, Eoin P O'Reilly

Nanoscale· May 2014

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Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k·p Hamiltonian.
O Marquardt, E P O'Reilly, S Schulz

J Phys Condens Matter· January 2014

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Comparison of stress and total energy methods for calculation of elastic properties of semiconductors.
M A Caro, S Schulz, E P O'Reilly

J Phys Condens Matter· January 2013

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The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.
Muhammad Usman, Vittorianna Tasco, Maria Teresa Todaro, Milena De Giorgi, Eoin P O'Reilly

Nanotechnology· April 2012

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Dynamics of light propagation in spatiotemporal dielectric structures.
Fabio Biancalana, Andreas Amann, Alexander V Uskov, Eoin P O'Reilly

Phys Rev E Stat Nonlin Soft Matter Phys· April 2007

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Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys.
A Lindsay, E P O'Reilly

Phys Rev Lett· November 2004

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Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.
P W Fry, I E Itskevich, D J Mowbray, M S Skolnick, J J Finley, E P O'Reilly

Phys Rev Lett· January 2000

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Interplay of strain and superlattice ordering on GaInP2 quantum-well valence-subband structure.
EP O'Reilly, AT Meney

Phys Rev B Condens Matter· March 1995

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Evaluation of various approximations used in the envelope-function method.
AT Meney, B Gonul, EP O'Reilly

Phys Rev B Condens Matter· October 1994

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Valence-band-shape modification due to band coupling in strained quantum wells.
L Viña, L Muñoz, N Mestres, ES Koteles, A Ghiti, EP O'Reilly

Phys Rev B Condens Matter· May 1993

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Evidence of type-I band offsets in strained GaAs1-xSbx/GaAs quantum wells from high-pressure photoluminescence.
AD Prins, DJ Dunstan, JD Lambkin, EP O'Reilly, AR Adams

Phys Rev B Condens Matter· January 1993

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Strain-induced valence-subband splitting in III-V semiconductors.
M Silver, W Batty, A Ghiti, EP O'Reilly

Phys Rev B Condens Matter· September 1992

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Exciton-binding-energy maximum in Ga1-xInxAs/GaAs quantum wells.
MJ Haines, N Ahmed, SJ Adams, K Mitchell, IR Agool, EP O'Reilly

Phys Rev B Condens Matter· May 1991

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"Universal" conduction-band structure in some common semiconductor compounds.
EA Johnson, A MacKinnon, EP O'Reilly, M Silver

Phys Rev Lett· August 1990

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Hydrostatic pressure coefficients of the photoluminescence of InxGa1-xAs/GaAs strained-layer quantum wells.
VA Wilkinson, AD Prins, JD Lambkin, EP O'Reilly, DJ Dunstan

Phys Rev B Condens Matter· August 1990

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Resonant electron scattering due to the central cells of impurities observed in AlGaAs under hydrostatic pressure.
MA Fisher, AR Adams, EP O'Reilly, JJ Harris

Phys Rev Lett· November 1987

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Electronic and atomic structure of amorphous carbon.
J Robertson, EP O'Reilly

Phys Rev B Condens Matter· February 1987

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Electronic structure of amorphous III-V and II-VI compound semiconductors and their defects.
EP O'Reilly, J Robertson

Phys Rev B Condens Matter· December 1986

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