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Publications by authors named "G Langouche"

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A
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.
R Mantovan, R Fallica, A Mokhles Gerami, T E Mølholt, C Wiemer, G Langouche

Sci Rep· August 2017


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Charge states and lattice sites of dilute implanted Sn in ZnO.
T E Mølholt, H P Gunnlaugsson, K Johnston, R Mantovan, J Röder, G Langouche

J Phys Condens Matter· April 2017


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Fe charge state adjustment in ZnO upon ion implantation.
R Mantovan, H P Gunnlaugsson, D Naidoo, S Olafsson, K Johnston, G Langouche

J Phys Condens Matter· December 2012


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Lattice location and stability of ion implanted Cu in Si.
U Wahl, A Vantomme, G Langouche, JG Correia

Phys Rev Lett· February 2000


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Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy.
JE Mahan, A Vantomme, G Langouche, JP Becker

Phys Rev B Condens Matter· December 1996


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