Publications by authors named "GA Samara"

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Pressure-Induced Crossover from Long- to Short-Range Order in Compositionally Disordered Soft Mode Ferroelectrics.
GA Samara

Phys Rev Lett· July 1996

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Effects of pressure and ambient species on orientational ordering in solid C70.
GA Samara, LV Hansen, B Morosin, JE Schirber

Phys Rev B Condens Matter· March 1996

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Negative pressure effects in high-pressure oxygen-intercalated C60.
JE Schirber, RA Assink, GA Samara, B Morosin, D Loy

Phys Rev B Condens Matter· June 1995

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Strong quantum-size effects in a layered semiconductor: MoS2 nanoclusters.
JP Wilcoxon, GA Samara

Phys Rev B Condens Matter· March 1995

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Phosphorus doping of boron carbides.
TL Aselage, D Emin, GA Samara, DR Tallant, Van Deusen SB

Phys Rev B Condens Matter· October 1993

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ac hopping conductivities, dielectric constants, and reflectivities of boron carbides.
GA Samara, HL Tardy, EL Venturini, TL Aselage, D Emin

Phys Rev B Condens Matter· July 1993

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Effects of pressure and ambient species on the orientational ordering in solid C60.
GA Samara, LV Hansen, RA Assink, B Morosin, JE Schirber

Phys Rev B Condens Matter· February 1993

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Breathing-mode relaxation associated with electron emission and capture processes of EL2 in GaAs.
GA Samara, DW Vook, JF Gibbons

Phys Rev Lett· March 1992

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Pressure dependence of the orientational ordering in solid C60.
GA Samara, JE Schirber, B Morosin, LV Hansen, D Loy

Phys Rev Lett· November 1991

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Pressure dependence of the E2 and E1 deep levels in GaAs, GaP, and their alloys.
GA Samara, RM Biefeld, LR Dawson, TE Zipperian, CE Barnes

Phys Rev B Condens Matter· March 1991

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Temperature and frequency dependences of the dielectric properties of YBa2Cu3O6+x (x.
GA Samara, WF Hammetter, EL Venturini

Phys Rev B Condens Matter· May 1990

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Pressure dependence of deep electronic levels in semiconductors: Phosphorus-vacancy pair (or Si E center) and divacancy in silicon.
GA Samara

Phys Rev B Condens Matter· June 1989

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Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon.
GA Samara

Phys Rev B Condens Matter· May 1989

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Reply to "Comment on volume relaxation around defects in silicon upon electron emission".
GA Samara, CE Barnes

Phys Rev B Condens Matter· September 1988

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Breathing-mode lattice relaxation associated with the vacancy and phosphorous-vacancy-pair (E-center) defect in silicon.
GA Samara

Phys Rev B Condens Matter· May 1988

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Pressure dependence of deep electronic levels in semiconductors: The oxygen-vacancy pair (or A center) in silicon.
GA Samara

Phys Rev B Condens Matter· September 1987

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Pressure-induced suppression of the proton-glass phase and isotope effects in Rb1-x(NH4)xH2PO4.
GA Samara, H Terauchi

Phys Rev Lett· July 1987

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Pressure dependence of impurity levels in semiconductors: The deep gold acceptor level and shallow donor and acceptor levels in silicon.
GA Samara, CE Barnes

Phys Rev B Condens Matter· May 1987

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Lattice relaxation accompanying carrier capture and emission by deep electronic levels in semiconductors.
GA Samara, CE Barnes

Phys Rev Lett· October 1986

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Pressure dependence of proton glass freezing in Rb1-x(NH4)xH2PO4.
GA Samara, VH Schmidt

Phys Rev B Condens Matter· August 1986

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Pressure and temperature dependences of the electronic conductivity of boron carbides.
GA Samara, D Emin, C Wood

Phys Rev B Condens Matter· August 1985

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