Publications by authors named "GV Hansson"

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I
Identification of Grown-In Efficient Nonradiative Recombination Centers in Molecular Beam Epitaxial Silicon.
WM Chen, IA Buyanova, W Ni, GV Hansson, B Monemar

Phys Rev Lett· November 1996

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H
Hall factor in strained p-type doped Si1-xGex alloy.
Y Fu, KB Joelsson, KJ Grahn, W Ni, GV Hansson

Phys Rev B Condens Matter· October 1996

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P
Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layers.
IA Buyanova, WM Chen, A Henry, W Ni, GV Hansson

Phys Rev B Condens Matter· April 1996

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Fermi-edge singularity in p-type modulation-doped SiGe quantum wells.
IA Buyanova, WM Chen, A Henry, W Ni, GV Hansson

Phys Rev B Condens Matter· January 1996

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E
Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy.
IA Buyanova, WM Chen, A Henry, W Ni, GV Hansson

Phys Rev B Condens Matter· October 1995

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T
Temperature-induced manipulation of nucleation during Si and Ge molecular-beam epitaxy.
MI Larsson, WX Ni, GV Hansson

Phys Rev B Condens Matter· August 1994

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D
delta -function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy.
W Ni, GV Hansson, J Sundgren, L Hultman, LR Wallenberg

Phys Rev B Condens Matter· September 1992

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A
Analysis of resonant-tunneling transport.
GD Shen, DX Xu, M Willander, GV Hansson

Phys Rev B Condens Matter· April 1992

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B
Band offsets in pseudomorphically grown Si/Si1-xGex heterostructures studied with core-level x-ray photoelectron spectroscopy.
WX Ni, GV Hansson

Phys Rev B Condens Matter· August 1990

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S
Surface-state band structure of the Si(100)2 x 1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces.
LS Johansson, RI Uhrberg, P Mårtensson, GV Hansson

Phys Rev B Condens Matter· July 1990

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K
Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy.
W Ni, J Knall, MA Hasan, GV Hansson, J Sundgren

Phys Rev B Condens Matter· November 1989

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S
Symmetry properties and band structure of surface states on the single-domain, hydrogen-chemisorbed Si(100)2 x 1:H surface.
LS Johansson, RI Uhrberg, GV Hansson

Phys Rev B Condens Matter· December 1988

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N
New method to study band offsets applied to strained Si/Si1-xGex(100) heterojunction interfaces.
W Ni, J Knall, GV Hansson

Phys Rev B Condens Matter· November 1987

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S
Surface electronic structure of Si(111)7 x 7-Ge and Si(111)5 x 5-Ge studied with photoemission and inverse photoemission.
P Martensson, WX Ni, GV Hansson, JM Nicholls, B Reihl

Phys Rev B Condens Matter· October 1987

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S
Si(111)7 x 7-Ge and Si(111)5 x 5-Ge surfaces studied with angle-resolved photoemission.
P Martensson, A Cricenti, LS Johansson, GV Hansson

Phys Rev B Condens Matter· August 1986

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P
Photoemission study of the surface states that pin the Fermi level at Si(100)2 x 1 surfaces.
P Mårtensson, A Cricenti, GV Hansson

Phys Rev B Condens Matter· June 1986

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S
Surface electronic structure of GaAs(110)1 x 1-Sb studied with angle-resolved photoelectron spectroscopy.
P Mrtensson, GV Hansson, M Lähdeniemi, KO Magnusson, S Wiklund

Phys Rev B Condens Matter· May 1986

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N
New surface states on the annealed Ge(111) surface.
JM Nicholls, GV Hansson, RI Uhrberg, SA Flodström

Phys Rev B Condens Matter· April 1986

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B
Bulk electronic structure of germanium studied with angle-resolved photoemission.
JM Nicholls, GV Hansson, UO Karlsson, PE Persson, RI Uhrberg

Phys Rev B Condens Matter· November 1985

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P
Photoemission study of the antibonding surface-state band on Si(111)2 x 1.
P Mrtensson, A Cricenti, GV Hansson

Phys Rev B Condens Matter· November 1985

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S
Surface states on Si(111) sqrt 3-bar x sqrt 3-bar-In: Experiment and theory.
JM Nicholls, P Mrtensson, GV Hansson, JE Northrup

Phys Rev B Condens Matter· July 1985

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D
Direct photoemission study of the antibonding surface-state band on Ge(111)2 x 1.
JM Nicholls, P Mrtensson, GV Hansson

Phys Rev Lett· May 1985

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B
Bulk and surface electronic structures of Si(111)2 x 1 and Si(111)7 x 7 studied by angle-resolved photoelectron spectroscopy.
RI Uhrberg, GV Hansson, UO Karlsson, JM Nicholls, PE Persson

Phys Rev B Condens Matter· March 1985

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P
Photoemission study of the surface and bulk electronic structures of Si(111)7 x 7 and Si(111) <= 3-bar x <= 3-bar:Al.
RI Uhrberg, GV Hansson, JM Nicholls, PE Persson, SA Flodström

Phys Rev B Condens Matter· March 1985

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S
Similarity of Si(110)5 x 1 and Si(111)2 x 1 surfaces.
P Mårtensson, GV Hansson, P Chiaradia

Phys Rev B Condens Matter· February 1985

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