Publications by authors named "HJ Gossmann"

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Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy.
M Rummukainen, I Makkonen, V Ranki, M J Puska, K Saarinen, H-J L Gossmann

Phys Rev Lett· April 2005

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Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes.
P M Voyles, D J Chadi, P H Citrin, D A Muller, J L Grazul, H-J L Gossmann

Phys Rev Lett· September 2003

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Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si.
P M Voyles, D A Muller, J L Grazul, P H Citrin, H-J L Gossmann

Nature· April 2002

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Quantitative TEM of point defects in Si.
DJ Eaglesham, VC Venezia, HJ Gossmann, A Agarwal

J Electron Microsc (Tokyo)· January 2000

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Surface diffusion and islanding in semiconductor heterostructures.
H J Gossmann, G J Fisanick

Scanning Microsc· September 1990

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Arsenic atom location on passivated silicon (111) surfaces.
JR Patel, JA Golovchenko, PE Freeland, HJ Gossmann

Phys Rev B Condens Matter· November 1987

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