Publications by authors named "HJ Osten"

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Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system.
Yvo Barnscheidt, Jan Schmidt, H Jörg Osten

J Appl Crystallogr· October 2020

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Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown GdO on Si(001).
Philipp Gribisch, Jan Schmidt, Hans Jörg Osten, Andreas Fissel

Acta Crystallogr B Struct Sci Cryst Eng Mater· February 2019

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Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films.
Ajit K Katiyar, Andreas Grimm, R Bar, Jan Schmidt, Tobias Wietler, H Joerg Osten

Nanotechnology· October 2016

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MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device.
S Manna, R Aluguri, A Katiyar, S Das, A Laha, H J Osten

Nanotechnology· December 2013

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Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition.
Andrian P Milanov, Ke Xu, Apurba Laha, Eberhard Bugiel, Ramadurai Ranjith, H Jörg Osten

J Am Chem Soc· January 2010

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Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide.
Apurba Laha, E Bugiel, M Jestremski, R Ranjith, A Fissel, H J Osten

Nanotechnology· November 2009

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Phonons as a probe of short-range order in Si1-xCx alloys.
H Rücker, M Methfessel, B Dietrich, K Pressel, HJ Osten

Phys Rev B Condens Matter· January 1996

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Observation of the formation of a carbon-rich surface layer in silicon.
HJ Osten, M Methfessel, G Lippert, H Rücker

Phys Rev B Condens Matter· October 1995

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Characterization of Si/Si1-xGex/Si quantum wells by space-charge spectroscopy.
K Schmalz, IN Yassievich, H Rücker, HG Grimmeiss, H Frankenfeld, HJ Osten

Phys Rev B Condens Matter· November 1994

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Lattice distortion in a strain-compensated Si1-x-yGexCy layer on silicon.
B Dietrich, HJ Osten, H Rücker, M Methfessel, P Zaumseil

Phys Rev B Condens Matter· June 1994

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Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si.
H Rücker, M Methfessel, E Bugiel, HJ Osten

Phys Rev Lett· May 1994

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Surfactant-controlled solid phase epitaxy of germanium on silicon.
HJ Osten, J Klatt, G Lippert, B Dietrich, E Bugiel

Phys Rev Lett· July 1992

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