Publications by authors named "IM Vitomirov"

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G
Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces.
IM Vitomirov, A Raisanen, AC Finnefrock, RE Viturro, LJ Brillson

Phys Rev B Condens Matter· November 1992

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C
Chemical and electronic properties of Al/.
S Chang, IM Vitomirov, LJ Brillson, C Mailhiot, DF Rioux

Phys Rev B Condens Matter· June 1992

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C
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces.
S Chang, IM Vitomirov, LJ Brillson, DF Rioux, PD Kirchner

Phys Rev B Condens Matter· July 1991

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E
Effects of growth temperature on atom distributions, Fermi-level positions, and valence-band offsets for Ge/n-type InP(110) heterojunctions.
CM Aldao, IM Vitomirov, GD Waddill, JH Weaver

Phys Rev B Condens Matter· June 1991

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E
Erratum: Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy.
S Chang, IM Vitomirov, LJ Brillson, DF Rioux, PD Kirchner

Phys Rev B Condens Matter· October 1990

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I
Interface formation with ions and neutral atoms.
CM Aldao, DJ Aastuen, M Vos, IM Vitomirov, GD Waddill

Phys Rev B Condens Matter· August 1990

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C
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy.
S Chang, IM Vitomirov, LJ Brillson, DF Rioux, PD Kirchner

Phys Rev B Condens Matter· June 1990

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Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies.
IM Vitomirov, CM Aldao, GD Waddill, C Capasso, JH Weaver

Phys Rev B Condens Matter· April 1990

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A
Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions.
GD Waddill, IM Vitomirov, CM Aldao, SG Anderson, C Capasso

Phys Rev B Condens Matter· March 1990

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D
Dynamic-coupling model: Interpretation of temperature-, dopant-concentration-, and coverage-dependent Schottky-barrier formation.
CM Aldao, IM Vitomirov, GD Waddill, SG Anderson, JH Weaver

Phys Rev B Condens Matter· February 1990

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D
Development of rare-earth-semiconductor interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110).
BM Trafas, CM Aldao, C Capasso, Y Shapira, F Boscherini, IM Vitomirov

Phys Rev B Condens Matter· November 1989

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T
Temperature-dependent Al/GaAs(110) interface formation and adatom energy references.
SG Anderson, CM Aldao, GD Waddill, IM Vitomirov, SJ Severtson

Phys Rev B Condens Matter· October 1989

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R
Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces.
IM Vitomirov, GD Waddill, CM Aldao, SG Anderson, C Capasso

Phys Rev B Condens Matter· August 1989

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D
Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions.
CM Aldao, IM Vitomirov, F Xu, JH Weaver

Phys Rev B Condens Matter· August 1989

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D
Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K.
CM Aldao, SG Anderson, C Capasso, GD Waddill, IM Vitomirov

Phys Rev B Condens Matter· June 1989

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C
Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces.
GD Waddill, IM Vitomirov, CM Aldao, JH Weaver

Phys Rev Lett· March 1989

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C
Cr, Co, Pd, Au, and In overlayers on PbS(100): Adatom interactions and interface formation.
BM Trafas, IM Vitomirov, CM Aldao, Y Gao, F Xu

Phys Rev B Condens Matter· February 1989

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P
Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation.
IM Vitomirov, CM Aldao, Z Lin, Y Gao, BM Trafas

Phys Rev B Condens Matter· November 1988

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D
Disruption, segregation, and passivation for Pd and noble-metal overlayers on YBa2Cu3O6.9.
TJ Wagener, Y Gao, IM Vitomirov, CM Aldao, JJ Joyce

Phys Rev B Condens Matter· July 1988

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3
3d transition metals on InP(110): A comparative study of reactive interface evolution.
CM Aldao, IM Vitomirov, F Xu, JH Weaver

Phys Rev B Condens Matter· April 1988

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Synchrotron-radiation photoemission studies of interface formation between metals and superconductors: Al and In on YBa2Cu.
Y Gao, IM Vitomirov, CM Aldao, TJ Wagener, JJ Joyce

Phys Rev B Condens Matter· March 1988

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I
Incident beam effects in medium-energy backscattered electron diffraction.
SA Chambers, IM Vitomirov, JH Weaver

Phys Rev B Condens Matter· August 1987

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D
Direct evidence of the onset of In surface segregation for Co/InP(110).
F Xu, CM Aldao, IM Vitomirov, Z Lin, JH Weaver

Phys Rev B Condens Matter· August 1987

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M
Medium-energy backscattered electron diffraction as a probe of elastic strain in epitaxial overlayers.
SA Chambers, IM Vitomirov, SB Anderson, JH Weaver

Phys Rev B Condens Matter· February 1987

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S
Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8 x 2).
SA Chambers, F Xu, HW Chen, IM Vitomirov, SB Anderson

Phys Rev B Condens Matter· November 1986

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