Publications by authors named "IP Batra"

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A
Absence of metallicity in Cs-GaAs(110): A Hubbard-model study.
Z Gedik, S Ciraci, IP Batra

Phys Rev B Condens Matter· June 1993

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Theoretical study of short- and long-range forces and atom transfer in scanning force microscopy.
S Ciraci, E Tekman, A Baratoff, IP Batra

Phys Rev B Condens Matter· October 1992

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Strain and dipole effects in covalent-polar semiconductor superlattices.
IP Batra, S Ciraci, E Özbay

Phys Rev B Condens Matter· September 1991

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Interaction of alkali metals with Si(001)-2 x 1.
IP Batra

Phys Rev B Condens Matter· May 1991

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F
Fermi-level pinning in an Al-Ge metal-semiconductor junction.
S Ciraci, A Baratoff, IP Batra

Phys Rev B Condens Matter· March 1991

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Gapless Peierls transition.
IP Batra

Phys Rev B Condens Matter· November 1990

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Site-dependent electronic effects, forces, and deformations in scanning tunneling microscopy of flat metal surfaces.
S Ciraci, A Baratoff, IP Batra

Phys Rev B Condens Matter· October 1990

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Atomic structure of the Si(001)-(2 x 1) surface.
IP Batra

Phys Rev B Condens Matter· March 1990

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Z
Zone-folded direct band gaps and energetics in strained (Si)4/(Ge)4 superlattices.
S Ciraci, A Baratoff, IP Batra

Phys Rev B Condens Matter· March 1990

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Tip-sample interaction effects in scanning-tunneling and atomic-force microscopy.
S Ciraci, A Baratoff, IP Batra

Phys Rev B Condens Matter· February 1990

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Stability of metallic dimers on the Si(001) surface.
IP Batra

Phys Rev Lett· October 1989

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E
Electronic properties of Na overlayers on the GaAs(110) surface.
CY Fong, LH Yang, IP Batra

Phys Rev B Condens Matter· September 1989

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Stability of the strained-layer superlattice (GaP)1/(InP)1 (001).
JS Nelson, IP Batra

Phys Rev B Condens Matter· February 1989

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Atomic and electronic structure of the Na/Si(001)-2 x 1 surface.
IP Batra

Phys Rev B Condens Matter· February 1989

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D
delta doping in strained (Si)/(Ge) superlattices.
S Ciraci, IP Batra, E Tekman

Phys Rev B Condens Matter· December 1988

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Strained Si/Ge superlattices: Structural stability, growth, and electronic properties.
S Ciraci, IP Batra

Phys Rev B Condens Matter· July 1988

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Silicon donor states in heavily doped thin GaAs-AlAs(001) superlattices.
JS Nelson, CY Fong, IP Batra, WE Pickett, BM Klein

Phys Rev B Condens Matter· June 1988

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A
Adsorption of potassium on the ideal Si(111) surface.
IP Batra, S Ciraci

Phys Rev B Condens Matter· May 1988

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E
Effect of tip profile on atomic-force microscope images: A model study.
FF Abraham, IP Batra, S Ciraci

Phys Rev Lett· March 1988

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C
Ciraci and Batra reply.
S Ciraci, IP Batra

Phys Rev Lett· February 1988

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E
Effects on vibrational and electronic properties of removing hydrogen atoms in hydrogenated amorphous silicon.
JS Nelson, CY Fong, L Guttman, IP Batra

Phys Rev B Condens Matter· February 1988

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Surface metallization of silicon by potassium adsorption on Si(001)-(2 x 1).
S Ciraci, IP Batra

Phys Rev B Condens Matter· February 1988

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Scanning-tunneling microscopy at small tip-to-surface distances.
S Ciraci, IP Batra

Phys Rev B Condens Matter· October 1987

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Work function of metals upon alkali-metal adsorption: Overlayer relaxation.
PA Serena, JM Soler, N García, IP Batra

Phys Rev B Condens Matter· August 1987

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S
Self-consistent study of confined states in thin GaAs-AlAs superlattices.
S Ciraci, IP Batra

Phys Rev B Condens Matter· July 1987

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