Publications by authors named "JA Kash"

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Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks.
Min Yang, William M J Green, Solomon Assefa, Joris Van Campenhout, Benjamin G Lee, Jeffrey A Kash

Opt Express· January 2011

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Optical observation of impurity localized states at the edges of Landau subbands in doped quantum wells.
D Gekhtman, JA Kash, E Cohen, A Ron

Phys Rev B Condens Matter· July 1996

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Influence of the carrier distribution on carrier-carrier scattering in GaAs.
JA Kash

Phys Rev B Condens Matter· February 1995

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Dynamics and spin relaxation of excitons in GaAs/AlxGa1-xAs quantum wells.
A Frommer, A Ron, E Cohen, JA Kash, LN Pfeiffer

Phys Rev B Condens Matter· October 1994

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Carrier-carrier scattering: An experimental comparison of bulk GaAs and GaAs/AlxGa1-xAs quantum wells.
JA Kash

Phys Rev B Condens Matter· December 1993

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Comment on "Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors".
JA Kash

Phys Rev Lett· August 1993

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Hot-electron luminescence: A comparison of GaAs and InP.
JA Kash

Phys Rev B Condens Matter· January 1993

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Anisotropic valence bands in quantum wells: Quantitative comparison of theory and experiment.
JA Kash, M Zachau, MA Tischler, U Ekenberg

Phys Rev Lett· October 1992

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Kash et al. reply.
JA Kash, M Zachau, EE Mendez, JM Hong, T Fukuzawa

Phys Rev Lett· August 1992

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Relaxation of excitons in thin quantum wells.
M Zachau, JA Kash, WT Masselink

Phys Rev B Condens Matter· October 1991

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Measurement of the hole dispersion in a quantum well by hot-electron-acceptor luminescence.
M Zachau, JA Kash, WT Masselink

Phys Rev B Condens Matter· August 1991

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Fermi-Dirac distribution of excitons in coupled quantum wells.
JA Kash, M Zachau, EE Mendez, JM Hong, T Fukuzawa

Phys Rev Lett· April 1991

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Electric-field effects on exciton lifetimes in symmetric coupled GaAs/Al0.3Ga0.7As double quantum wells.
A Alexandrou, JA Kash, EE Mendez, M Zachau, JM Hong

Phys Rev B Condens Matter· November 1990

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Long mean free path of hot electrons selectively injected to higher subbands.
B Laikhtman, U Sivan, A Yacoby, CP Umbach, M Heiblum, JA Kash

Phys Rev Lett· October 1990

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Kash, Tsang, and Ulbrich reply.
JA Kash, JC Tsang, RG Ulbrich

Phys Rev Lett· July 1990

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Carrier-carrier scattering in GaAs: Quantitative measurements from hot (e,A0) luminescence.
JA Kash

Phys Rev B Condens Matter· August 1989

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Hot-electron recombination at neutral acceptors in GaAs: A cw probe of femtosecond intervalley scattering.
RG Ulbrich, JA Kash, JC Tsang

Phys Rev Lett· February 1989

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Localization and wave-vector conservation for optical phonons in AlxGa1-xAs and thin layers of GaAs.
JA Kash, JM Hvam, JC Tsang, TF Kuech

Phys Rev B Condens Matter· September 1988

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Kash, Jha, and Tsang reply.
JA Kash, SS Jha, JC Tsang

Phys Rev Lett· February 1988

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Picosecond Raman studies of the Fröhlich interaction in semiconductor alloys.
JA Kash, SS Jha, JC Tsang

Phys Rev Lett· May 1987

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Raman scattering in the presence of photoexcited nonequilibrium carriers in semiconductors: Theoretical considerations.
SS Jha, JA Kash, JC Tsang

Phys Rev B Condens Matter· October 1986

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Picosecond spectroscopy of hot anti-Stokes luminescence in GaAs.
JC Tsang, JA Kash

Phys Rev B Condens Matter· October 1986

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Thermally activated exciton transfer in GaAs1-xPx.
JA Kash, H Mariette, DJ Wolford

Phys Rev B Condens Matter· September 1985

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Erratum: Exciton transfer at low temperature in GaxIn1-xP:N and GaAs1-xPx:N.
H Mariette, JA Kash, DJ Wolford, A Marbeuf

Phys Rev B Condens Matter· August 1985

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Sub-picosecond time-resolved Raman spectroscopy of LO phonons in GaAs.
JA Kash, JC Tsang, JM Hvam

Phys Rev Lett· May 1985

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