Publications by authors named "JM Baranowski"

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Formation of GeO under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor.
Ewa Dumiszewska, Paweł Ciepielewski, Piotr A Caban, Iwona Jóźwik, Jaroslaw Gaca, Jacek M Baranowski

Molecules· June 2022

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Growth of highly oriented MoSvia an intercalation process in the graphene/SiC(0001) system.
Paweł Piotr Michałowski, Piotr Knyps, Paweł Ciepielewski, Piotr A Caban, Ewa Dumiszewska, Jacek M Baranowski

Phys Chem Chem Phys· October 2019

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Highly selective covalent organic functionalization of epitaxial graphene.
Rebeca A Bueno, José I Martínez, Roberto F Luccas, Nerea Ruiz Del Árbol, Carmen Munuera, Jacek M Baranowski

Nat Commun· May 2017

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Large-area high-quality graphene on Ge(001)/Si(001) substrates.
I Pasternak, P Dabrowski, P Ciepielewski, V Kolkovsky, Z Klusek, J M Baranowski

Nanoscale· June 2016

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Graphene growth on Ge(100)/Si(100) substrates by CVD method.
Iwona Pasternak, Marek Wesolowski, Iwona Jozwik, Mindaugas Lukosius, Grzegorz Lupina, Jacek M Baranowski

Sci Rep· February 2016

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SEM and Raman analysis of graphene on SiC(0001).
K Grodecki, I Jozwik, J M Baranowski, D Teklinska, W Strupinski

Micron· January 2016

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Graphene epitaxy by chemical vapor deposition on SiC.
W Strupinski, K Grodecki, A Wysmolek, R Stepniewski, T Szkopek, J M Baranowski

Nano Lett· April 2011

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Fine structure of effective mass acceptors in gallium nitride.
R Stepniewski, A Wysmołek, M Potemski, K Pakuła, J M Baranowski

Phys Rev Lett· November 2003

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Splitting of the metastable EL2 acceptor state.
A Babinski, A Wysmolek, JM Baranowski

Phys Rev B Condens Matter· October 1994

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Evidence for trigonal symmetry of the metastable state of the EL2 defect in GaAs.
P Trautman, JM Baranowski

Phys Rev Lett· July 1992

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Baranowski et al. reply.
JM Baranowski, Z Liliental-Weber, W Yau, ER Weber

Phys Rev Lett· January 1992

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Evidence for superconductivity in low-temperature-grown GaAs.
JM Baranowski, Z Liliental-Weber, W Yau, ER Weber

Phys Rev Lett· June 1991

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Piezospectroscopic evidence for tetrahedral symmetry of the EL2 defect in GaAs.
P Trautman, JP Walczak, JM Baranowski

Phys Rev B Condens Matter· February 1990

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Chemical activity of hydrogen in a Si lattice.
JM Baranowski

Phys Rev B Condens Matter· April 1989

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Bonding or antibonding position of hydrogen in silicon.
JM Baranowski, J Tatarkiewicz

Phys Rev B Condens Matter· May 1987

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