Publications by authors named "KA Bertness"

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Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances.
Bryan T Spann, Joel C Weber, Matt D Brubaker, Todd E Harvey, Lina Yang, Kris A Bertness

Adv Mater· June 2023

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Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials.
Luis Miaja-Avila, Benjamin W Caplins, Ann N Chiaramonti, Paul T Blanchard, Matt D Brubaker, Kris A Bertness

J Phys Chem C Nanomater Interfaces· January 2021

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Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy.
Matt D Brubaker, Alexana Roshko, Samuel Berweger, Paul T Blanchard, Charles A E Little, Kris A Bertness

Nanotechnology· July 2020

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UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy.
Matt D Brubaker, Kristen L Genter, Alexana Roshko, Paul T Blanchard, Bryan T Spann, Kris A Bertness

Nanotechnology· June 2019

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Black GaAs with Sub-Wavelength Nanostructures Fabricated via Lithography-Free Metal-Assisted Chemical Etching.
Thomas S Wilhelm, Alex P Kolberg, Mohadeseh A Baboli, Alireza Abrand, Kris A Bertness

ECS J Solid State Sci Technol· January 2019

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Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon.
Alexana Roshko, Matt D Brubaker, Paul T Blanchard, Todd E Harvey, Kris A Bertness

Phys Status Solidi B Basic Solid State Phys· January 2019

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Axisymmetric scalable magneto-gravitational trap for diamagnetic particle levitation.
J P Houlton, M L Chen, M D Brubaker, K A Bertness, C T Rogers

Rev Sci Instrum· December 2018

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An optical Bragg scattering readout for simultaneous detection of all low-order mechanical modes of gallium nitride nanowires in nanowire arrays.
John P Houlton, Matt D Brubaker, Kris A Bertness, Charles T Rogers

Appl Phys Lett· September 2018

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GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.
Wenjun Li, Matt D Brubaker, Bryan T Spann, Kris A Bertness, Patrick Fay

IEEE Electron Device Lett· February 2018

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Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates.
Alexana Roshko, Matt Brubaker, Paul Blanchard, Todd Harvey, Kris A Bertness

Crystals (Basel)· January 2018

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Core-shell GaN nanowire LEDs by N-polar selective area growth.
Matt D Brubaker, Kristen L Genter, Joel C Weber, Bryan T Spann, Alexana Roshko, Kris A Bertness

Proc SPIE Int Soc Opt Eng· January 2018

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Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy.
Paul Blanchard, Matt Brubaker, Todd Harvey, Alexana Roshko, Norman Sanford, Kris A Bertness

Crystals (Basel)· January 2018

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Comparison of convergent beam electron diffraction and annular bright field atomic imaging for GaN polarity determination.
Alexana Roshko, Matt D Brubaker, Paul T Blanchard, Kris A Bertness, Todd E Harvey

J Mater Res· January 2017

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Near-Field Control and Imaging of Free Charge Carrier Variations in GaN Nanowires.
Samuel Berweger, Paul T Blanchard, Matt D Brubaker, Kevin J Coakley, Norman A Sanford, Kris A Bertness

Appl Phys Lett· January 2016

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Periodic dynamics, localization metastability, and elastic interaction of colloidal particles with confining surfaces and helicoidal structure of cholesteric liquid crystals.
Michael C M Varney, Qiaoxuan Zhang, Mykola Tasinkevych, Nuno M Silvestre, Kris A Bertness

Phys Rev E Stat Nonlin Soft Matter Phys· December 2014

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GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy.
Joel C Weber, Paul T Blanchard, Aric W Sanders, Jonas C Gertsch, Steven M George, Kris A Bertness

Nanotechnology· October 2014

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Analysis of contact interfaces for single GaN nanowire devices.
Andrew M Herrero, Paul T Blanchard, Kris A Bertness

J Vis Exp· November 2013

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On-chip optical interconnects made with gallium nitride nanowires.
Matt D Brubaker, Paul T Blanchard, John B Schlager, Aric W Sanders, Alexana Roshko, Kris A Bertness

Nano Lett· February 2013

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Vibrational modes of GaN nanowires in the gigahertz range.
W L Johnson, S A Kim, R Geiss, C M Flannery, K A Bertness

Nanotechnology· December 2012

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Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.
Andrew M Herrero, Paul T Blanchard, Aric Sanders, Matt D Brubaker, Norman A Sanford, Kris A Bertness

Nanotechnology· September 2012

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Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
Patrick Parkinson, Christopher Dodson, Hannah J Joyce, Kris A Bertness, Norman A Sanford

Nano Lett· September 2012

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Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.
G Jacopin, L Rigutti, S Bellei, P Lavenus, F H Julien, K A Bertness

Nanotechnology· August 2012

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A near-field scanning microwave microscope for characterization of inhomogeneous photovoltaics.
J C Weber, J B Schlager, N A Sanford, A Imtiaz, T M Wallis, K A Bertness

Rev Sci Instrum· August 2012

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Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes.
Alicia I Baca, Joseph J Brown, Kris A Bertness, Victor M Bright

Nanotechnology· June 2012

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Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO(2)-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors.
Geetha S Aluri, Abhishek Motayed, Albert V Davydov, Vladimir P Oleshko, Kris A Bertness

Nanotechnology· May 2012

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