Publications by authors named "Matt Brubaker"

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Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances.
Bryan T Spann, Joel C Weber, Matt D Brubaker, Todd E Harvey, Lina Yang

Adv Mater· June 2023

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Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials.
Luis Miaja-Avila, Benjamin W Caplins, Ann N Chiaramonti, Paul T Blanchard, Matt D Brubaker

J Phys Chem C Nanomater Interfaces· January 2021

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Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy.
Matt D Brubaker, Alexana Roshko, Samuel Berweger, Paul T Blanchard, Charles A E Little

Nanotechnology· July 2020

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UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy.
Matt D Brubaker, Kristen L Genter, Alexana Roshko, Paul T Blanchard, Bryan T Spann

Nanotechnology· June 2019

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Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon.
Alexana Roshko, Matt D Brubaker, Paul T Blanchard, Todd E Harvey, Kris A Bertness

Phys Status Solidi B Basic Solid State Phys· January 2019

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An optical Bragg scattering readout for simultaneous detection of all low-order mechanical modes of gallium nitride nanowires in nanowire arrays.
John P Houlton, Matt D Brubaker, Kris A Bertness, Charles T Rogers

Appl Phys Lett· September 2018

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GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.
Wenjun Li, Matt D Brubaker, Bryan T Spann, Kris A Bertness, Patrick Fay

IEEE Electron Device Lett· February 2018

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Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates.
Alexana Roshko, Matt Brubaker, Paul Blanchard, Todd Harvey, Kris A Bertness

Crystals (Basel)· January 2018

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Core-shell GaN nanowire LEDs by N-polar selective area growth.
Matt D Brubaker, Kristen L Genter, Joel C Weber, Bryan T Spann, Alexana Roshko

Proc SPIE Int Soc Opt Eng· January 2018

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Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy.
Paul Blanchard, Matt Brubaker, Todd Harvey, Alexana Roshko, Norman Sanford

Crystals (Basel)· January 2018

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Comparison of convergent beam electron diffraction and annular bright field atomic imaging for GaN polarity determination.
Alexana Roshko, Matt D Brubaker, Paul T Blanchard, Kris A Bertness, Todd E Harvey

J Mater Res· January 2017

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Near-Field Control and Imaging of Free Charge Carrier Variations in GaN Nanowires.
Samuel Berweger, Paul T Blanchard, Matt D Brubaker, Kevin J Coakley, Norman A Sanford

Appl Phys Lett· January 2016

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On-chip optical interconnects made with gallium nitride nanowires.
Matt D Brubaker, Paul T Blanchard, John B Schlager, Aric W Sanders, Alexana Roshko

Nano Lett· February 2013

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Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.
Andrew M Herrero, Paul T Blanchard, Aric Sanders, Matt D Brubaker, Norman A Sanford

Nanotechnology· September 2012

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