Publications by authors named "MA Boshart"

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Site Exchange of Ge and Sb on Si(100) during Surfactant-Mediated Epitaxial Growth.
MA Boshart, AA Bailes, LE Seiberling

Phys Rev Lett· August 1996

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Observation of planar oscillations of MeV protons in silicon using ion channeling patterns.
MB Breese, PJ King, GW Grime, PJ Smulders, LE Seiberling, MA Boshart

Phys Rev B Condens Matter· April 1996

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Energy-loss distributions for 2.5-MeV He+ ions incident on Si single crystals.
MA Boshart, A Dygo, LE Seiberling

Phys Rev A· March 1995

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Impact-parameter dependence of energy loss for 625-keV H+ ions in Si single crystals.
A Dygo, MA Boshart, LE Seiberling, NM Kabachnik

Phys Rev A· December 1994

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Transmission-ion-channeling investigation of Ge adsorbed on the Si(100) surface at submonolayer coverage.
MW Grant, DJ Dieleman, MA Boshart, LE Seiberling

Phys Rev B Condens Matter· June 1994

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