Publications by authors named "MV Fischetti"

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Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches.
Yeonghun Lee, Xiaolong Yao, Massimo V Fischetti, Kyeongjae Cho

Phys Chem Chem Phys· April 2020

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Electronic Transport Properties of Silicane Determined from First Principles.
Mohammad Mahdi Khatami, Gautam Gaddemane, Maarten L Van de Put, Massimo V Fischetti, Mohammad Kazem Moravvej-Farshi

Materials (Basel)· September 2019

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Imperfect two-dimensional topological insulator field-effect transistors.
William G Vandenberghe, Massimo V Fischetti

Nat Commun· January 2017

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Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons.
Massimo V Fischetti, Jiseok Kim, Sudarshan Narayanan, Zhun-Yong Ong, Catherine Sachs

J Phys Condens Matter· November 2013

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Monte Carlo study of electron transport in silicon inversion layers.
MV Fischetti, SE Laux

Phys Rev B Condens Matter· July 1993

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Effect of the electron-plasmon interaction on the electron mobility in silicon.
MV Fischetti

Phys Rev B Condens Matter· September 1991

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Coulombic and neutral trapping centers in silicon dioxide.
DA Buchanan, MV Fischetti, DJ DiMaria

Phys Rev B Condens Matter· January 1991

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Soft-x-ray-induced core-level photoemission as a probe of hot-electron dynamics in SiO2.
FR McFeely, E Cartier, LJ Terminello, A Santoni, MV Fischetti

Phys Rev Lett· October 1990

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Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects.
MV Fischetti, SE Laux

Phys Rev B Condens Matter· November 1988

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Ballistic electron transport in thin silicon dioxide films.
MV Fischetti, DJ DiMaria, L Dori, J Batey, E Tierney

Phys Rev B Condens Matter· March 1987

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Electron interference effects in quantum wells: Observation of bound and resonant states.
M Heiblum, MV Fischetti, WP Dumke, DJ Frank, IM Anderson

Phys Rev Lett· February 1987

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Direct observation of ballistic electrons in silicon dioxide.
DJ DiMaria, MV Fischetti, J Batey, L Dori, E Tierney

Phys Rev Lett· December 1986

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Direct observation of the threshold for electron heating in silicon dioxide.
DJ DiMaria, MV Fischetti, E Tierney, SD Brorson

Phys Rev Lett· March 1986

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Quantum Monte Carlo simulation of high-field electron transport: An application to silicon dioxide.
MV Fischetti, DJ DiMaria

Phys Rev Lett· November 1985

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Theory of high-field electron transport in silicon dioxide.
MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, aJ Kirtley

Phys Rev B Condens Matter· June 1985

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Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode.
MV Fischetti

Phys Rev B Condens Matter· February 1985

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