Publications by authors named "Michael Waltl"

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A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection.
Alexander Karl, Axel Verdianu, Dominic Waldhoer, Theresia Knobloch, Joël Kurzweil, Michael Waltl

Nat Commun· November 2025

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Computer processors built from 2D materials.
Michael Waltl, Tibor Grasser

Nature· June 2025

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Two-dimensional BiSeO and Its Native Insulators for Next-Generation Nanoelectronics.
Pedram Khakbaz, Dominic Waldhoer, Mina Bahrami, Theresia Knobloch, Mahdi Pourfath, Michael Waltl

ACS Nano· March 2025

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Fluoride dielectrics for 2D transistors.
Tibor Grasser, Michael Waltl, Theresia Knobloch

Nat Nanotechnol· July 2024

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All van der Waals Semiconducting PtSe Field Effect Transistors with Low Contact Resistance Graphite Electrodes.
M Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Michael Waltl

Nano Lett· June 2024

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Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-SiN).
Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, Diego Milardovich, Michael Waltl

Nanomaterials (Basel)· August 2023

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Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Michael Waltl, Theresia Knobloch, Konstantinos Tselios, Lado Filipovic, Bernhard Stampfer

Adv Mater· December 2022

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Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.
Theresia Knobloch, Burkay Uzlu, Yury Yu Illarionov, Zhenxing Wang, Martin Otto, Michael Waltl

Nat Electron· June 2022

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Reliability of Miniaturized Transistors from the Perspective of Single-Defects.
Michael Waltl

Micromachines (Basel)· July 2020

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Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.
Bernhard Stampfer, Franz Schanovsky, Tibor Grasser, Michael Waltl

Micromachines (Basel)· April 2020

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Characterization of Single Defects in Ultrascaled MoS Field-Effect Transistors.
Bernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, Theresia Knobloch, Peng Wu, Michael Waltl

ACS Nano· June 2018

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Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.
Yury Yuryevich Illarionov, Michael Waltl, Gerhard Rzepa, Joon-Seok Kim, Seohee Kim

ACS Nano· October 2016

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