Publications by authors named "Philippe Dollfus"

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Anomalous Temperature-Dependent Thermal Transport in Crystalline Polyethylene Driven by Strong Anharmonicity.
Shouhang Li, Philippe Dollfus, Jérôme Saint-Martin, Davide Romanin

J Phys Chem Lett· October 2025

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Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions.
Jelena Sjakste, Raja Sen, Nathalie Vast, Jerome Saint-Martin, Mohammad Ghanem, Philippe Dollfus

J Chem Phys· February 2025

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High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions.
Jean Choukroun, Marco Pala, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus

Nanotechnology· January 2019

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High thermoelectric performance of graphite nanofibers.
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz

Nanoscale· February 2018

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Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation.
Olivier Pluchery, Louis Caillard, Philippe Dollfus, Yves J Chabal

J Phys Chem B· January 2018

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Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors.
Vincent Talbo, Jérôme Saint-Martin, Sylvie Retailleau, Philippe Dollfus

Sci Rep· November 2017

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Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties.
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus, Sebastian Volz

Sci Rep· May 2017

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High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering.
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus

Nanotechnology· December 2015

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Thermoelectric effects in graphene nanostructures.
Philippe Dollfus, Viet Hung Nguyen, Jérôme Saint-Martin

J Phys Condens Matter· April 2015

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Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor.
Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Damien Querlioz, Philippe Dollfus

J Nanosci Nanotechnol· February 2013

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Monte Carlo simulation of III-V material-based MOSFET for high frequency and ultra-low consumption applications.
Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Hassan Maher, Michel Renvoise, Philippe Dollfus

J Nanosci Nanotechnol· November 2010

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