Publications by authors named "RG Mani"

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C
Current scaling of the magnetoresistance peaks in the microwave radiation induced magnetoresistance oscillations.
Rameshwor Poudel, U Kushan Wijewardena, Tharanga N Nanayakkara, Annika Kriisa, Christian Reichl, Ramesh G Mani

Sci Rep· July 2025

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Study of graphene p-n junctions formed by the electrostatic modification of the SiO substrate.
Tharanga R Nanayakkara, U Kushan Wijewardena, Annika Kriisa, Ramesh G Mani

Sci Rep· May 2024

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Size dependence- and induced transformations- of fractional quantum Hall effects under tilted magnetic fields.
U Kushan Wijewardena, Tharanga R Nanayakkara, Annika Kriisa, Christian Reichl, Werner Wegscheider, Ramesh G Mani

Sci Rep· November 2022

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Marginal metallic state at a fractional filling of '8/5' and '4/3' of Landau levels in the GaAs/AlGaAs 2D electron system.
R G Mani, U K Wijewardena, T R Nanayakkara, Annika Kriisa, C Reichl

Sci Rep· July 2021

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Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation.
R L Samaraweera, B Gunawardana, T R Nanayakkara, R C Munasinghe, A Kriisa, R G Mani

Sci Rep· January 2020

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Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene.
R G Mani, A Kriisa, R Munasinghe

Sci Rep· May 2019

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C
Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands.
A Kriisa, R L Samaraweera, M S Heimbeck, H O Everitt, C Reichl, R G Mani

Sci Rep· February 2019

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Electron heating induced by an ac-bias current in the regime of Shubnikov-de Haas oscillation in the high mobility GaAs/Al Ga As two-dimensional electron system.
C Rasadi Munasinghe, B Gunawardana, R L Samaraweera, Z Wang, T R Nanayakkara, R G Mani

J Phys Condens Matter· August 2018

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Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES.
R L Samaraweera, H-C Liu, B Gunawardana, A Kriisa, C Reichl, R G Mani

Sci Rep· July 2018

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B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system.
Han-Chun Liu, C Reichl, W Wegscheider, R G Mani

Sci Rep· May 2018

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Hall devices: Improve contactless sensing technology.
Ramesh G Mani, Annika Kriisa

Nature· August 2017

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Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES.
R L Samaraweera, H-C Liu, Z Wang, C Reichl, W Wegscheider, R G Mani

Sci Rep· July 2017

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Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.
Zhuo Wang, R L Samaraweera, C Reichl, W Wegscheider, R G Mani

Sci Rep· December 2016

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C
Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation.
Tianyu Ye, Han-Chun Liu, Zhuo Wang, W Wegscheider, Ramesh G Mani

Sci Rep· October 2015

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Magneto-transport characteristics of a 2D electron system driven to negative magneto-conductivity by microwave photoexcitation.
R G Mani, A Kriisa

Sci Rep· December 2013

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Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices.
R G Mani, A Kriisa, W Wegscheider

Sci Rep· September 2013

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Observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene.
Ramesh G Mani, John Hankinson, Claire Berger, Walter A de Heer

Nat Commun· November 2012

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D
Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices.
R G Mani, J H Smet, K von Klitzing, V Narayanamurti, W B Johnson

Phys Rev Lett· April 2004

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Z
Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures.
Ramesh G Mani, Jürgen H Smet, Klaus von Klitzing, Venkatesh Narayanamurti, William B Johnson

Nature· December 2002

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Hall effect over integral filling factors in GaAs/AlxGa1-xAs quantum wires.
RG Mani, von Klitzing K, K Ploog

Phys Rev B Condens Matter· January 1995

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Magnetoresistance over the intermediate localization regime in GaAs/AlxGa1-xAs quantum wires.
RG Mani, von Klitzing K, K Ploog

Phys Rev B Condens Matter· August 1993

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Localization at high magnetic fields in GaAs/AlxGa1-xAs quantum wires.
RG Mani, Kv Klitzing

Phys Rev B Condens Matter· October 1992

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Scaling magnetoresistance induced by superconducting contacts in n-type GaAs.
RG Mani, L Ghenim, TN Theis

Phys Rev B Condens Matter· May 1992

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Q
Quantum coherence effects and field-induced localization in InSb.
RG Mani, L Ghenim, JB Choi

Phys Rev B Condens Matter· May 1991

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Influence of localization on the Hall effect in narrow-gap, bulk semiconductors.
RG Mani

Phys Rev B Condens Matter· April 1990

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