Publications by authors named "Ruijing Ge"

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Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide.
Md Hasibul Alam, Sayema Chowdhury, Anupam Roy, Xiaohan Wu, Ruijing Ge

ACS Nano· March 2022

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A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon.
Ruijing Ge, Xiaohan Wu, Liangbo Liang, Saban M Hus, Yuqian Gu

Adv Mater· February 2021

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Observation of single-defect memristor in an MoS atomic sheet.
Saban M Hus, Ruijing Ge, Po-An Chen, Liangbo Liang, Gavin E Donnelly

Nat Nanotechnol· January 2021

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Understanding of multiple resistance states by current sweeping in MoS-based non-volatile memory devices.
Xiaohan Wu, Ruijing Ge, Deji Akinwande, Jack C Lee

Nanotechnology· November 2020

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Resistance state evolution under constant electric stress on a MoS non-volatile resistive switching device.
Xiaohan Wu, Ruijing Ge, Yifu Huang, Deji Akinwande, Jack C Lee

RSC Adv· November 2020

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Thinnest Nonvolatile Memory Based on Monolayer h-BN.
Xiaohan Wu, Ruijing Ge, Po-An Chen, Harry Chou, Zhepeng Zhang

Adv Mater· April 2019

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Zero-static power radio-frequency switches based on MoS atomristors.
Myungsoo Kim, Ruijing Ge, Xiaohan Wu, Xing Lan, Jesse Tice

Nat Commun· June 2018

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Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.
Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Jianping Shi, Sushant Sonde

Nano Lett· January 2018

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Electrodeposition of porous graphene networks on nickel foams as supercapacitor electrodes with high capacitance and remarkable cyclic stability.
Shaolin Yang, Bingchen Deng, Ruijing Ge, Li Zhang, Hong Wang

Nanoscale Res Lett· December 2014

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