Publications by authors named "T Journot"

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Charge transfers and charged defects in WSe/graphene-SiC interfaces.
Y J Dappe, Y Almadori, M T Dau, C Vergnaud, M Jamet, T Journot

Nanotechnology· April 2020

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Remote epitaxy using graphene enables growth of stress-free GaN.
T Journot, H Okuno, N Mollard, A Michon, R Dagher

Nanotechnology· December 2019

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The valley Nernst effect in WSe.
Minh Tuan Dau, Céline Vergnaud, Alain Marty, Cyrille Beigné, Serge Gambarelli, Timotée Journot

Nat Commun· December 2019

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Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene.
Timotée Journot, Vincent Bouchiat, Bruno Gayral, Jean Dijon, Bérangère Hyot

ACS Appl Mater Interfaces· June 2018

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Towards the Application of Structure-Property Relationship Modeling in Materials Science: Predicting the Seebeck Coefficient for Ionic Liquid/Redox Couple Systems.
Anita Sosnowska, Maciej Barycki, Agnieszka Gajewicz, Maciej Bobrowski, Sylwia Freza, Tony Journot

Chemphyschem· June 2016

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