Publications by authors named "Tae-Hun Shim"

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Real-Time Unsupervised Learning and Image Recognition via Memristive Neural Integrated Chip Based on Negative Differential Resistance of Electrochemical Metallization Cell Neuron Device.
Dae-Seong Woo, Jae-Kyeong Kim, Gwang-Ho Park, Woo-Guk Lee, Min-Jong Han, Tae-Hun Shim

Small· May 2025

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Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol-Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm.
Ji-Ho Choi, Woo-Guk Lee, Tae-Hun Shim, Jea-Gun Park

Nanomaterials (Basel)· January 2023

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Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge Se Resistive Switching Layer in a Cross-Point Synaptic Memristor Array.
Hea-Jee Kim, Dae-Seong Woo, Soo-Min Jin, Hyo-Jun Kwon, Ki-Hyun Kwon, Tae-Hun Shim

Adv Mater· October 2022

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Design of n-base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector.
Byoung-Seok Lee, Min-Won Kim, Ji-Hun Kim, Sang-Dong Yoo, Tae-Hun Shim

Nanotechnology· April 2021

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Dislocation sink annihilating threading dislocations in strain-relaxed Si Ge layer.
Sam-Jong Choi, Il-Hwan Kim, Jun-Seong Park, Tae-Hun Shim, Jea-Gun Park

Nanotechnology· March 2020

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Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States.
Jin-Young Choi, Hansol Jun, Kei Ashiba, Jong-Ung Baek, Tae-Hun Shim

Sci Rep· August 2019

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Performance of thyristor memory device formed by a wet etching process.
Jisoo Yoo, Gyujin Oh, Min-Won Kim, Seung-Hyun Song, Sang-Dong Yoo, Tae-Hun Shim

Nanotechnology· January 2019

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Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.
Du-Yeong Lee, Seung-Eun Lee, Tae-Hun Shim, Jea-Gun Park

Nanoscale Res Lett· December 2016

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Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions.
Du-Yeong Lee, Tae-Hun Shim, Jea-Gun Park

Nanotechnology· July 2016

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Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt] n lower synthetic-antiferromagnetic layer.
Seung-Eun Lee, Tae-Hun Shim, Jea-Gun Park

Nanotechnology· November 2015

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The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2 free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions.
Min-Su Jeon, Kyo-Suk Chae, Du-Yeong Lee, Yasutaka Takemura, Seung-Eun Lee, Tae-Hun Shim

Nanoscale· May 2015

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Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer.
Yasutaka Takemura, Du-Yeong Lee, Seung-Eun Lee, Kyo-Suk Chae, Tae-Hun Shim

Nanotechnology· May 2015

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Etch characteristics of magnetic tunnel junction materials using bias pulsing in the CH4/N2O inductively coupled plasma.
Min Hwan Jeon, Ji Youn Youn, Kyung Chae Yang, Deok Hyun Yun, Du Yeong Lee, Tae Hun Shim

J Nanosci Nanotechnol· December 2014

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Effect of RF pulsing biasing on the etching of magnetic tunnel junction materials using CH3OH.
Min Hwan Jeon, Deok Hyun Yun, Kyung Chae Yang, Ji Youm Youn, Du Yeong Lee, Tae Hun Shim

J Nanosci Nanotechnol· December 2014

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A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator.
Jea-Gun Park, Seong-Je Kim, Mi-Hee Shin, Seung-Hyun Song, Sung-Woong Chung, Tae-Hun Shim

Nanotechnology· August 2011

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The effect of donor layer thickness on the power conversion efficiency of organic photovoltaic devices fabricated with a double small-molecular layer.
Su-Hwan Lee, Dal-Ho Kim, Tae-Hun Shim, Jea-Gun Park

Nanotechnology· August 2009

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