Publications by authors named "V Prozheeva"

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Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites.
Filip Tuomisto, Vera Prozheeva, Ilja Makkonen, Thomas H Myers, Michal Bockowski

Phys Rev Lett· November 2017

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Evaluation of the concentration of point defects in GaN.
M A Reshchikov, A Usikov, H Helava, Yu Makarov, V Prozheeva

Sci Rep· August 2017

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Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2.
Ilja Makkonen, Esa Korhonen, Vera Prozheeva, Filip Tuomisto

J Phys Condens Matter· June 2016

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