Publications by authors named "Weikun Ge"

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Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity Length.
Chen Ji, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Weikun Ge

Adv Sci (Weinh)· December 2025

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Stacking III-Nitride Ultraviolet-B Light Emitters with High Efficiency via a Lattice-Engineered Architecture.
Ziyao Zhang, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Weikun Ge

Adv Mater· October 2025

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Single-Atom-Resolved Vibrational Spectroscopy of a Dislocation.
Hailing Jiang, Tao Wang, Zhenyu Zhang, Ruochen Shi, Xifan Xu, Weikun Ge

Nano Lett· October 2025

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Dislocation-assisted electron and hole transport in GaN epitaxial layers.
Yixu Yao, Sen Huang, Ruyue Cao, Zhaofu Zhang, Xinhua Wang, Weikun Ge

Nat Commun· July 2025

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Indirect Band Nature of Atomically Thin Hexagonal Boron Nitride Identified by Resonant Excitation in the Deep Ultraviolet Regime.
Lei Fu, Yuqing Hu, Ning Tang, Junxi Duan, Xionghui Jia, Weikun Ge

Phys Rev Lett· July 2025

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Experimental determination of giant polarization in wurtzite III-nitride semiconductors.
Haotian Ye, Ping Wang, Rui Wang, Jinlin Wang, Xifan Xu, Weikun Ge

Nat Commun· April 2025

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Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric Jogs.
Han Yang, Xiangru Han, Xuelin Yang, Yingming Song, Beile Chen, Weikun Ge

Phys Rev Lett· February 2025

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Atomic-scale visualization of defect-induced localized vibrations in GaN.
Hailing Jiang, Tao Wang, Zhenyu Zhang, Fang Liu, Ruochen Shi, Weikun Ge

Nat Commun· October 2024

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Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters.
Jiaming Wang, Chen Ji, Jing Lang, Fujun Xu, Lisheng Zhang, Weikun Ge

Nat Commun· October 2024

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A near-resonant excitation strategy to achieve ultra-low threshold GaN polariton lasing.
Jiajia Yang, Renchun Tao, Zhen Huang, Duo Li, Xin Rong, Weikun Ge

Opt Lett· July 2024

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Wavelength-Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe for Artificial Synaptic Features.
Jiayang Jiang, Weiting Xu, Zhenhao Sun, Lei Fu, Shixiong Zhang, Weikun Ge

Small· March 2024

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Polarization-Resolved Near-Infrared PdSe p-i-n Homojunction Photodetector.
Jiayang Jiang, Weiting Xu, Fuqiang Guo, Shengxue Yang, Weikun Ge

Nano Lett· October 2023

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Group-III nitride heteroepitaxial films approaching bulk-class quality.
Jiaming Wang, Nan Xie, Fujun Xu, Lisheng Zhang, Jing Lang, Weikun Ge

Nat Mater· July 2023

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Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate.
Huapeng Liu, Bowen Sheng, Tao Wang, Konstantin Kudryavtsev, Artem Yablonskiy, Weikun Ge

Fundam Res· September 2022

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Photo-induced macro/mesoscopic scale ion displacement in mixed-halide perovskites: ring structures and ionic plasma oscillations.
Xiaoxiao Sun, Yong Zhang, Weikun Ge

Light Sci Appl· September 2022

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Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN.
Shanshan Sheng, Tao Wang, Shangfeng Liu, Fang Liu, Bowen Sheng, Weikun Ge

Adv Sci (Weinh)· August 2022

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Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously.
Duo Li, Shangfeng Liu, Zeyuan Qian, Quanfeng Liu, Kang Zhou, Weikun Ge

Adv Mater· May 2022

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Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping.
Jiaming Wang, Mingxing Wang, Fujun Xu, Baiyin Liu, Jing Lang, Weikun Ge

Light Sci Appl· March 2022

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Single-photon emission from isolated monolayer islands of InGaN.
Xiaoxiao Sun, Ping Wang, Tao Wang, Ling Chen, Zhaoying Chen, Weikun Ge

Light Sci Appl· September 2020

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Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.
Xingchen Liu, Ning Tang, Shixiong Zhang, Xiaoyue Zhang, Hongming Guan, Weikun Ge

Adv Sci (Weinh)· July 2020

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Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors.
Xingchen Liu, Ning Tang, Chi Fang, Caihua Wan, Shixiong Zhang, Weikun Ge

RSC Adv· March 2020

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Inversion Symmetry Breaking Induced Valley Hall Effect in Multilayer WSe.
Hongming Guan, Ning Tang, Hao Huang, Xiaoyue Zhang, Meng Su, Weikun Ge

ACS Nano· August 2019

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Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.
Shan Wu, Xuelin Yang, Haishan Zhang, Lin Shi, Qing Zhang, Weikun Ge

Phys Rev Lett· October 2018

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High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy.
Tao Wang, Xinqiang Wang, Zhaoying Chen, Xiaoxiao Sun, Ping Wang, Weikun Ge

Adv Sci (Weinh)· September 2018

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Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN.
Xiaoxiao Sun, Xinqiang Wang, Ping Wang, Tao Wang, Bowen Sheng, Weikun Ge

Opt Express· November 2017

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