Monolithic integration of embedded III-V lasers on SOI.

Wen-Qi Wei, An He, Bo Yang, Zi-Hao Wang, Jing-Zhi Huang, Dong Han, Ming Ming, Xuhan Guo, Yikai Su, Jian-Jun Zhang, Ting Wang

April 2023 Light Sci Appl

Synopsis of Social media discussions

The discussions demonstrate a strong consensus on the breakthrough nature of monolithically integrating III-V lasers on SOI, with phrases like 'research highlight' and references to advanced methods like molecular beam epitaxy showing deep engagement. The use of terms like 'significant' and 'scalable' convey the perceived transformative potential of this work within photonics and silicon integration fields.

A
Agreement
 Moderate agreement

Most discussions express approval, emphasizing the significance and success of the research, indicating overall agreement on its importance.

I
Interest
 High level of interest

The posts show high enthusiasm, highlighting keywords like 'highlight,' 'research article,' and 'highlights,' which reflect strong interest in the topic.

E
Engagement
 Moderate level of engagement

The posts reference specific techniques and implications, such as scalability and integration, demonstrating meaningful engagement.

I
Impact
 High level of impact

Many discussions suggest the research could revolutionize photonic circuits and silicon photonics, indicating a perception of high impact.

Social Mentions

YouTube

1 Videos

Twitter

9 Posts

Metrics

Video Views

48

Total Likes

14

Extended Reach

12,207

Social Features

10

Timeline: Posts about article

Top Social Media Posts

Posts referencing the article

Monolithic Integration of III-V Lasers on Silicon On Insulator

Monolithic Integration of III-V Lasers on Silicon On Insulator

This research demonstrates the successful monolithic integration of embedded InAsGaAs quantum dot lasers directly grown on silicon-on-insulator substrates, enabling seamless connection with silicon waveguides. Advanced techniques like patterned grating structures and hybrid molecular beam epitaxy were used to achieve high-p

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August 8, 2023

48 views

  • Imabit Inc
    @imabit_inc (Twitter)

    RT @hasdid: #Nauture #Science #Light #Automated | Monolithic integration of embedded III-V lasers on SOI https://t.co/dMCgroixDe
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    May 1, 2023

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    #Nauture #Science #Light #Automated | Monolithic integration of embedded III-V lasers on SOI https://t.co/dMCgroixDe
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    May 1, 2023

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    RT @LightSciAppl: #LSA_Highlight: [Research Article] Monolithic integration of embedded III-V lasers on SOI. @UCAS1978 @sjtu1896 #SLML Keyw…
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    April 4, 2023

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    RT @LightSciAppl: #LSA_Highlight: [Research Article] Monolithic integration of embedded III-V lasers on SOI. @UCAS1978 @sjtu1896 #SLML Keyw…
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    #LSA_Highlight: [Research Article] Monolithic integration of embedded III-V lasers on SOI. @UCAS1978 @sjtu1896 #SLML Keywords: #Semiconductor_lasers #Silicon_photonics https://t.co/N5NW7htTSq https://t.co/pK52QdjEOC
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    April 4, 2023

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  • Art Scott
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    RT @wladek60: [paper] Wei, WQ., He, A., Yang, B. et al. Monolithic integration of embedded III-V lasers on SOI. Light Sci Appl 12, 84 (2023…
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    April 3, 2023

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  • Wladek Grabinski
    @wladek60 (Twitter)

    [paper] Wei, WQ., He, A., Yang, B. et al. Monolithic integration of embedded III-V lasers on SOI. Light Sci Appl 12, 84 (2023). DOI: 10.1038/s41377-023-01128-z https://t.co/1kRwqIdKsq https://t.co/jKyhkG1Jev
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    April 3, 2023

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    Monolithic Integration of Embedded III-V Lasers on SOI https://t.co/JgQ1ZGqHg4 https://t.co/M8EhDhKWLC
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    July 18, 2022

  • arXiv physics
    @_arXiv_physics (Twitter)

    [2207.07914] Wen Qi Wei, An He, Bo Yang et al.: Monolithic Integration of Embedded III-V Lasers on SOI https://t.co/ffgQxzwnFc https://t.co/XaoAAa3Z44 #physics_optics
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    July 18, 2022

Abstract Synopsis

  • This research demonstrates the successful monolithic integration of embedded InAsGaAs quantum dot lasers directly grown on silicon-on-insulator (SOI) substrates, enabling seamless connection with silicon waveguides.
  • The team used advanced techniques like patterned grating structures and hybrid molecular beam epitaxy (MBE) to overcome previous challenges, achieving high-performance lasers with continuous-wave operation up to 85°C and a maximum output power of 68mW.
  • These findings offer a scalable, cost-effective method for creating on-chip light sources that can be integrated with silicon photonic components, paving the way for ultradense and energy-efficient photonic circuits.]