Publications by authors named "DK Biegelsen"

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Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001).
L Kipp, DK Biegelsen, JE Northrup, L Swartz, RD Bringans

Phys Rev Lett· April 1996

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Phosphine adsorption and decomposition on Si(100) 2 x 1 studied by STM.
L Kipp, RD Bringans, DK Biegelsen, JE Northrup, A Garcia

Phys Rev B Condens Matter· August 1995

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Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates.
LT Romano, RD Bringans, J Knall, DK Biegelsen, A Garcia

Phys Rev B Condens Matter· August 1994

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Arsine adsorption on Si(100) 2 x 1: A photoemission and scanning-tunneling-microscopy study.
L Kipp, RD Bringans, DK Biegelsen, L Swartz, RF Hicks

Phys Rev B Condens Matter· August 1994

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Selenium- and tellurium-terminated GaAs(100) surfaces observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev B Condens Matter· February 1994

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Arsenic termination of the Si(110) surface.
DK Biegelsen, RD Bringans, JE Northrup, MC Schabel, L Swartz

Phys Rev B Condens Matter· April 1993

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Atomic structure of the metastable c(4 x 4) reconstruction of Si(100).
RI Uhrberg, JE Northrup, DK Biegelsen, RD Bringans, L Swartz

Phys Rev B Condens Matter· October 1992

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Effect of interface chemistry on the growth of ZnSe on the Si(100) surface.
RD Bringans, DK Biegelsen, L Swartz, FA Ponce, JC Tramontana

Phys Rev B Condens Matter· June 1992

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Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy.
RD Bringans, DK Biegelsen, L Swartz

Phys Rev B Condens Matter· August 1991

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Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev B Condens Matter· August 1990

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Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev Lett· July 1990

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Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev B Condens Matter· March 1990

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Microscopic nature of coordination defects in amorphous silicon.
M Stutzmann, DK Biegelsen

Phys Rev B Condens Matter· November 1989

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Dangling or floating bonds in amorphous silicon?
M Stutzmann, DK Biegelsen

Phys Rev Lett· April 1988

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Detailed investigation of doping in hydrogenated amorphous silicon and germanium.
M Stutzmann, DK Biegelsen, RA Street

Phys Rev B Condens Matter· April 1987

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Electron-nuclear double-resonance experiments in hydrogenated amorphous silicon.
M Stutzmann, DK Biegelsen

Phys Rev B Condens Matter· September 1986

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H
Hyperfine studies of dangling bonds in amorphous silicon.
DK Biegelsen, M Stutzmann

Phys Rev B Condens Matter· March 1986

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Identification of deep-gap states in a-Si:H by photo- depopulation-induced electron-spin resonance.
NM Johnson, DK Biegelsen

Phys Rev B Condens Matter· March 1985

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