Publications by authors named "RD Bringans"

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R
Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001).
L Kipp, DK Biegelsen, JE Northrup, L Swartz, RD Bringans

Phys Rev Lett· April 1996

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Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001).
LT Romano, RD Bringans, X Zhou, WP Kirk

Phys Rev B Condens Matter· October 1995

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Phosphine adsorption and decomposition on Si(100) 2 x 1 studied by STM.
L Kipp, RD Bringans, DK Biegelsen, JE Northrup, A Garcia

Phys Rev B Condens Matter· August 1995

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Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates.
LT Romano, RD Bringans, J Knall, DK Biegelsen, A Garcia

Phys Rev B Condens Matter· August 1994

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Arsine adsorption on Si(100) 2 x 1: A photoemission and scanning-tunneling-microscopy study.
L Kipp, RD Bringans, DK Biegelsen, L Swartz, RF Hicks

Phys Rev B Condens Matter· August 1994

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Selenium- and tellurium-terminated GaAs(100) surfaces observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev B Condens Matter· February 1994

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Arsenic termination of the Si(110) surface.
DK Biegelsen, RD Bringans, JE Northrup, MC Schabel, L Swartz

Phys Rev B Condens Matter· April 1993

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Atomic structure of the metastable c(4 x 4) reconstruction of Si(100).
RI Uhrberg, JE Northrup, DK Biegelsen, RD Bringans, L Swartz

Phys Rev B Condens Matter· October 1992

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Effect of interface chemistry on the growth of ZnSe on the Si(100) surface.
RD Bringans, DK Biegelsen, L Swartz, FA Ponce, JC Tramontana

Phys Rev B Condens Matter· June 1992

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Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy.
RD Bringans, DK Biegelsen, L Swartz

Phys Rev B Condens Matter· August 1991

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Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev B Condens Matter· August 1990

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Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev Lett· July 1990

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Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces.
MA Olmstead, RD Bringans

Phys Rev B Condens Matter· April 1990

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Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.
DK Biegelsen, RD Bringans, JE Northrup, L Swartz

Phys Rev B Condens Matter· March 1990

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Bonding of Se and ZnSe to the Si(100) surface.
RD Bringans, MA Olmstead

Phys Rev B Condens Matter· June 1989

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E
Electronic and atomic structure of GaAs epitaxial overlayers on Si(111).
JE Northrup, RD Bringans, RI Uhrberg, MA Olmstead, RZ Bachrach

Phys Rev Lett· December 1988

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Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As.
RD Bringans, MA Olmstead, RI Uhrberg, RZ Bachrach

Phys Rev B Condens Matter· December 1987

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Photoemission study of bonding at the CaF2-on-Si(111) interface.
MA Olmstead, RI Uhrberg, RD Bringans, RZ Bachrach

Phys Rev B Condens Matter· May 1987

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Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface.
RI Uhrberg, RD Bringans, MA Olmstead, RZ Bachrach, JE Northrup

Phys Rev B Condens Matter· March 1987

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S
Surface bands for single-domain 2 x 1 reconstructed Si(100) and Si(100): As. Photoemission results for off-axis crystals.
RD Bringans, RI Uhrberg, MA Olmstead, RZ Bachrach

Phys Rev B Condens Matter· November 1986

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Arsenic overlayer on Si(111): Removal of surface reconstruction.
MA Olmstead, RD Bringans, RI Uhrberg, RZ Bachrach

Phys Rev B Condens Matter· October 1986

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Surface and bulk electronic structure of Ge(111) c(2 x 8) and Ge(111):As 1 x 1.
RD Bringans, RI Uhrberg, RZ Bachrach

Phys Rev B Condens Matter· August 1986

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Symmetric arsenic dimers on the Si(100) surface.
RI Uhrberg, RD Bringans, RZ Bachrach, JE Northrup

Phys Rev Lett· February 1986

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A
Arsenic-terminated Ge(111): An ideal 1 x 1 surface.
RD Bringans, RI Uhrberg, RZ Bachrach, JE Northrup

Phys Rev Lett· July 1985

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