Publications by authors named "Dominique Castelluci"

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Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy.
Hadi Hijazi, Mohammed Zeghouane, Jihen Jridi, Evelyne Gil, Dominique Castelluci

Nanotechnology· April 2021

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Compositional control of homogeneous InGaN nanowires with the In content up to 90.
Mohammed Zeghouane, Geoffrey Avit, Yamina André, Catherine Bougerol, Yoann Robin, Dominique Castelluci

Nanotechnology· January 2019

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Circumventing the miscibility gap in InGaN nanowires emitting from blue to red.
Elissa Roche, Yamina André, Geoffrey Avit, Catherine Bougerol, Dominique Castelluci

Nanotechnology· November 2018

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Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.
Zhenning Dong, Yamina André, Vladimir G Dubrovskii, Catherine Bougerol, Christine Leroux, Dominique Castelluci

Nanotechnology· March 2017

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Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
Evelyne Gil, Vladimir G Dubrovskii, Geoffrey Avit, Yamina André, Christine Leroux, Dominique Castelluci

Nano Lett· July 2014

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Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
Yamina André, Kaddour Lekhal, Philip Hoggan, Geoffrey Avit, Fabian Cadiz, Dominique Castelluci

J Chem Phys· May 2014

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Ultralong and defect-free GaN nanowires grown by the HVPE process.
Geoffrey Avit, Kaddour Lekhal, Yamina André, Catherine Bougerol, François Réveret, Dominique Castelluci

Nano Lett· February 2014

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