Publications by authors named "Geoffrey Avit"

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Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE.
Elias Semlali, Geoffrey Avit, Yamina André, Evelyne Gil, Andriy Moskalenko

Nanotechnology· April 2024

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Long indium-rich InGaAs nanowires by SAG-HVPE.
Emmanuel Chereau, Gabin Grégoire, Geoffrey Avit, Thierry Taliercio, Philipp Staudinger

Nanotechnology· February 2024

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Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography.
Geoffrey Avit, Yoann Robin, Yaqiang Liao, Hu Nan, Markus Pristovsek

Sci Rep· March 2021

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Compositional control of homogeneous InGaN nanowires with the In content up to 90.
Mohammed Zeghouane, Geoffrey Avit, Yamina André, Catherine Bougerol, Yoann Robin

Nanotechnology· January 2019

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Circumventing the miscibility gap in InGaN nanowires emitting from blue to red.
Elissa Roche, Yamina André, Geoffrey Avit, Catherine Bougerol, Dominique Castelluci

Nanotechnology· November 2018

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Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
Evelyne Gil, Vladimir G Dubrovskii, Geoffrey Avit, Yamina André, Christine Leroux

Nano Lett· July 2014

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Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
Yamina André, Kaddour Lekhal, Philip Hoggan, Geoffrey Avit, Fabian Cadiz

J Chem Phys· May 2014

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Ultralong and defect-free GaN nanowires grown by the HVPE process.
Geoffrey Avit, Kaddour Lekhal, Yamina André, Catherine Bougerol, François Réveret

Nano Lett· February 2014

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