Publications by authors named "Idriss Abid"

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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.
Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

Micromachines (Basel)· September 2022

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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid

Materials (Basel)· September 2020

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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Idriss Abid

Micromachines (Basel)· January 2020

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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante

Micromachines (Basel)· October 2019

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