Publications by authors named "P Lefaucheux"

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Author Correction: Mechanism understanding in cryo atomic layer etching of SiO based upon CF physisorption.
G Antoun, T Tillocher, P Lefaucheux, J Faguet, K Maekawa

Sci Rep· February 2022

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Comparison between Bosch and STiGer Processes for Deep Silicon Etching.
Thomas Tillocher, Jack Nos, Gaëlle Antoun, Philippe Lefaucheux, Mohamed Boufnichel

Micromachines (Basel)· September 2021

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Mechanism understanding in cryo atomic layer etching of SiO based upon CF physisorption.
G Antoun, T Tillocher, P Lefaucheux, J Faguet, K Maekawa

Sci Rep· January 2021

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Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above -50 °C.
R Chanson, L Zhang, S Naumov, Yu A Mankelevich, T Tillocher, P Lefaucheux

Sci Rep· January 2018

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