Publications by authors named "Po Holtz"

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Tuning the Emission Energy of Chemically Doped Graphene Quantum Dots.
Noor-Ul-Ain, Martin O Eriksson, Susann Schmidt, M Asghar, Pin-Cheng Lin, Per Olof Holtz

Nanomaterials (Basel)· November 2016

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Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy.
Y T Chen, K F Karlsson, J Birch, P O Holtz

Sci Rep· February 2016

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Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid.
Tomas Jemsson, Houssaine Machhadani, Per-Olof Holtz, K Fredrik Karlsson

Nanotechnology· February 2015

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Excitons and biexcitons in InGaN quantum dot like localization centers.
S Amloy, K F Karlsson, M O Eriksson, J Palisaitis, P O Å Persson, P O Holtz

Nanotechnology· December 2014

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InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids.
A Lundskog, J Palisaitis, C W Hsu, M Eriksson, K F Karlsson, P O Holtz

Nanotechnology· August 2012

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Symmetries and the polarized optical spectra of exciton complexes in quantum dots.
M A Dupertuis, K F Karlsson, D Y Oberli, E Pelucchi, A Rudra, P O Holtz

Phys Rev Lett· September 2011

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Single excitons in InGaN quantum dots on GaN pyramid arrays.
Chih-Wei Hsu, Anders Lundskog, K Fredrik Karlsson, Urban Forsberg, Erik Janzén, Per Olof Holtz

Nano Lett· June 2011

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Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area.
Evgenii Moskalenko, Arvid Larsson, Per Olof Holtz

Nanotechnology· August 2010

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Temperature and magnetic field effects on the transport controlled charge state of a single quantum dot.
L A Larsson, M Larsson, Es Moskalenko, Po Holtz

Nanoscale Res Lett· May 2010

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Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.
Evgenii S Moskalenko, L Arvid Larsson, Mats Larsson, Per Olof Holtz, Winston V Schoenfeld

Nano Lett· January 2009

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Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content.
M Gholami, H Haratizadeh, M Esmaeili, R Amiri, P O Holtz

Nanotechnology· August 2008

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Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.
Evgenii S Moskalenko, Mats Larsson, K Fredrik Karlsson, Per Olof Holtz, Bo Monemar

Nano Lett· January 2007

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Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots.
Evgenii S Moskalenko, Fredrik K Karlsson, Vesselin T Donchev, Per Olof Holtz, Bo Monemar

Nano Lett· November 2005

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Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime.
AC Ferreira, PO Holtz, BE Sernelius, I Buyanova, B Monemar

Phys Rev B Condens Matter· December 1996

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Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells.
AC Ferreira, PO Holtz, B Monemar, M Sundaram, K Campman

Phys Rev B Condens Matter· December 1996

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Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1-xAs heterojunctions.
T Lundström, J Dalfors, PO Holtz, QX Zhao, B Monemar

Phys Rev B Condens Matter· October 1996

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Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells.
AV Buyanov, AC Ferreira, E Söderström, IA Buyanova, PO Holtz

Phys Rev B Condens Matter· January 1996

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Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structures.
M Godlewski, T Lundström, QX Zhao, WM Chen, PO Holtz

Phys Rev B Condens Matter· November 1995

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Resonant coupling of electrons and excitons in an aperiodic superlattice under electric fields studied by photoluminescence spectroscopy.
SM Cao, M Willander, AA Toropov, TV Shubina, BY Mel'tser, PO Holtz

Phys Rev B Condens Matter· June 1995

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Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells.
CI Harris, B Monemar, H Kalt, PO Holtz, M Sundaram

Phys Rev B Condens Matter· May 1995

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Comment on "Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well".
PO Holtz, QX Zhao, CI Harris, JP Bergman, T Lundström

Phys Rev Lett· May 1995

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Exciton dynamics in GaAs/AlxGa1-xAs doped quantum wells.
CI Harris, B Monemar, H Kalt, PO Holtz, M Sundaram

Phys Rev B Condens Matter· December 1994

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Infrared-absorption spectra of acceptors confined in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.
QX Zhao, A Pasquarello, PO Holtz, B Monemar, M Willander

Phys Rev B Condens Matter· October 1994

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Magnetic-field-induced localization effects on radiative recombination in GaAs/AlxGa1-xAs heterostructures.
QX Zhao, B Monemar, PO Holtz, T Lundström, M Sundaram

Phys Rev B Condens Matter· September 1994

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Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wells.
PO Holtz, QX Zhao, AC Ferreira, B Monemar, A Pasquarello

Phys Rev B Condens Matter· August 1994

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